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MUN5211T1/D Datasheet

  • MUN5211T1/D

  • Bias Resistor Transistor

  • 12頁

  • ETC

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MUN5211T1 Series
Preferred Devices
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base鈥揺mitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC鈥?0/SOT鈥?23 package which is designed for low power surface
mount applications.
http://onsemi.com
NPN SILICON
BIAS RESISTOR
TRANSISTORS
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC鈥?0/SOT鈥?23 package can be soldered using
wave or reflow. The modified gull鈥搘inged leads absorb
thermal stress during soldering eliminating the possibility
of damage to the die.
鈥?/div>
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
MAXIMUM RATINGS
(T
A
= 25擄C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
PIN 1
BASE
(INPUT)
R
1
R
2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
3
1
2
SC鈥?0/SOT鈥?23
CASE 419
STYLE 3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance 鈥?/div>
Junction-to-Ambient
Thermal Resistance 鈥?/div>
Junction-to-Lead
Junction and Storage
Temperature Range
1. FR鈥? @ Minimum Pad
2. FR鈥? @ 1.0 x 1.0 inch Pad
Symbol
P
D
Max
202 (Note 1.)
310 (Note 2.)
1.6 (Note 1.)
2.5 (Note 2.)
618 (Note 1.)
403 (Note 2.)
280 (Note 1.)
332 (Note 2.)
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
擄C/W
擄C
8x = Specific Device Code
x = (See Marking Table)
M = Date Code
8x M
MARKING DIAGRAM
R
胃JA
R
胃JL
T
J
, T
stg
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
January, 2001 鈥?Rev. 4
Publication Order Number:
MUN5211T1/D

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  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    LRC
  • 英文版
    Dual Bias Resistor Trasnsistors
    MOTOROLA
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    LRC [Lesha...
  • 英文版
    Dual Bias Resistor Trasnsistors
    MOTOROLA [...
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...

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