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MTY10N100E Datasheet

  • MTY10N100E

  • TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM

  • 231.49KB

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTY10N100E/D
鈩?/div>
Data Sheet
TMOS E-FET.
鈩?/div>
Power Field Effect Transistor
Designer's
MTY10N100E
Motorola Preferred Device
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage鈥揵locking capability without
degrading performance over time. In addition, this advanced TMOS
E鈥揊ET is designed to withstand high energy in the avalanche and
commutation modes. Designed for high voltage and high speed
switching applications in power supplies, converters and PWM
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas
are critical and offer additional safety margin against unexpected
voltage transients.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Robust High Voltage Termination
Avalanche Energy Specified
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
TMOS POWER FET
10 AMPERES
1000 VOLTS
RDS(on) = 1.3 OHM
廬
D
G
S
CASE 340G鈥?2, STYLE 1
TO鈥?64
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage 鈥?Continuous
Gate鈥揝ource Voltage
鈥?Non鈥揜epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous @ TC = 25擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25擄C
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 10 Apk, L = 10 mH, RG = 25
鈩?/div>
)
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
TJ, Tstg
EAS
R
胃JC
R
胃JA
TL
Value
1000
1000
鹵
20
鹵
40
10
30
250
2.0
鈥?55 to 150
500
0.5
30
260
Unit
Vdc
Vdc
Vdc
Vpk
Amps
Watts
W/擄C
擄C
mJ
擄C/W
擄C
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
E鈥揊ET and Designer鈥檚 are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1995
1

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