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MTW33N10E Datasheet

  • MTW33N10E

  • TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM

  • 231.16KB

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTW33N10E/D
Designer's
TMOS E
鈩?/div>
Data Sheet
FET.
鈩?/div>
MTW33N10E
Motorola Preferred Device
Power Field Effect Transistor
TO 247 with Isolated Mounting Hole
N-Channel Enhancement-Mode Silicon Gate
This advanced TMOS E-FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
鈥?/div>
Isolated Mounting Hole Reduces Mounting Hardware
D
N-Channel
TMOS POWER FET
33 AMPERES
100 VOLTS
RDS(on) = 0.06 OHM
廬
G
S
CASE 340F, Style 1
TO-247AE
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Rating
Drain-Source Voltage
Drain-Gate Voltage (RGS = 1.0 M鈩?
Gate-Source Voltage 鈥?Continuous
Gate-Source Voltage
鈥?Non-Repetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous @ 25擄C
鈥?Continuous @ 100擄C
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 25 Vdc, VGS = 10 Vdc, IL = 33 Apk, L = 1.000 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction to Case
鈥?Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 5 seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
R
胃JC
R
胃JA
TL
Value
100
100
鹵
20
鹵
40
33
20
99
125
1.0
鈥?55 to 150
545
1.0
40
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/擄C
擄C
mJ
擄C/W
擄C
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
E-FET and Designer鈥檚 are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
3/94
漏
MTW33N10E
Motorola, Inc. 1994
MTW33N10E
1
MOTOROLA
MOTOROLA
1
1

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