TMOS E-FET.
鈩?/div>
Power Field Effect Transistor
TO-247 with Isolated Mounting Hole
Designer's
MTW32N20E
Motorola Preferred Device
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced TMOS E鈥揊ET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain鈥搕o鈥搒ource diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
鈥?/div>
Isolated Mounting Hole
TMOS POWER FET
32 AMPERES
200 VOLTS
RDS(on) = 0.075 OHM
廬
D
G
S
CASE 340K鈥?1, Style 1
TO鈥?47AE
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage 鈥?Continuous
Drain Current 鈥?Continuous
Drain Current
鈥?Continuous @ 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25擄C
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 50 Vdc, VGS = 10 Vpk, IL = 32 Apk, L = 1.58 mH, RG = 25
鈩?/div>
)
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
EAS
R
胃JC
R
胃JA
TL
Value
200
200
鹵
20
32
19
128
180
1.44
鈥?55 to 150
810
0.7
40
260
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/擄C
擄C
mJ
擄C/W
擄C
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
E鈥揊ET and Designer鈥檚 are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Sil Pad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
1
MTW32N20E 產品屬性
30
分離式半導體產品
FET - 單
-
MOSFET N 通道，金屬氧化物
標準型
200V
32A
75 毫歐 @ 16A，10V
4V @ 250µA
120nC @ 10V
5000pF @ 25V
180W
通孔
TO-247-3
TO-247
管件
MTW32N20EOS
MTW32N20E相關型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM
-
英文版
TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM
MOTOROLA [...
-
英文版
TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM
-
英文版
TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM
MOTOROLA [...
-
英文版
TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM
-
英文版
TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM
MOTOROLA [...
-
英文版
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
-
英文版
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
MOTOROLA [...
-
英文版
TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM
-
英文版
TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM
MOTOROLA [...
-
英文版
TMOS POWER FET 32 AMPERES 200 VOLTS
-
英文版
TMOS POWER FET 32 AMPERES 200 VOLTS
-
英文版
Power MOSFET 32 Amps, 200 Volts
-
英文版
TMOS POWER FET 32 AMPERES 250 VOLTS
-
英文版
TMOS POWER FET 32 AMPERES 250 VOLTS
-
英文版
TMOS POWER FET 33 AMPERES 100 VOLTS
-
英文版
TMOS POWER FET 33 AMPERES 100 VOLTS
-
英文版
TMOS POWER FET 35 AMPERES 150 VOLTS
-
英文版
TMOS POWER FET 35 AMPERES 150 VOLTS
MOTOROLA
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