TMOS E-FET.
鈩?/div>
Power Field Effect Transistor
TO-247 with Isolated Mounting Hole
Designer's
MTW14N50E
Motorola Preferred Device
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced TMOS E鈥揊ET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain鈥搕o鈥搒ource diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
鈥?/div>
Designed to Replace External Zener Transient Suppressor 鈥?/div>
Absorbs High Energy in the Avalanche Mode
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
G
S
TMOS POWER FET
14 AMPERES
500 VOLTS
RDS(on) = 0.40 OHM
廬
D
CASE 340K鈥?1, Style 1
TO鈥?47AE
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage 鈥?Continuous
Drain Current 鈥?Continuous
Drain Current
鈥?Continuous @ 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25擄C
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?STARTING TJ = 25擄C
(VDD = 50 Vdc, VGS = 10 Vpk, IL = 14 Apk, L = 8.8 mH, RG = 25
鈩?/div>
)
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
EAS
R
胃JC
R
胃JA
TL
Value
500
500
鹵
20
14
9.0
60
180
1.44
鈥?55 to 150
860
0.7
40
260
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/擄C
擄C
mJ
擄C/W
擄C
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
E鈥揊ET and Designer鈥檚 are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 4
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
1
MTW14N50E相關(guān)型號(hào)PDF文件下載
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英文版
TMOS E-FET POWER FIELD EFFECT TRANSISTOR
-
英文版
TMOS E-FET POWER FIELD EFFECT TRANSISTOR
MOTOROLA [...
-
英文版
TMOS POWER FET 14 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
-
英文版
TMOS POWER FET 14 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
MOTOROLA [...
-
英文版
TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHM
-
英文版
TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHM
MOTOROLA [...
-
英文版
TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM
-
英文版
TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM
MOTOROLA [...
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英文版
TMOS POWER FET 14 AMPERES 500 VOLTS
-
英文版
TMOS POWER FET 14 AMPERES 500 VOLTS
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英文版
TMOS POWER FET 14 AMPERES 500 VOLTS
-
英文版
AC/DC CONVERTER 5V +/-12V 15W
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英文版
AC/DC CONVERTER 5V +/-15V 15W
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英文版
TMOS POWER FET 16 AMPERES 400 VOLTS
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英文版
TMOS POWER FET 10 AMPERES 1000 VOLTS
MOTOROLA
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