TMOS E-FET.
鈩?/div>
Power Field Effect Transistor
D3PAK for Surface Mount
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage鈥揵locking capability without
degrading performance over time. In addition, this advanced TMOS
E鈥揊ET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain鈥搕o鈥搒ource diode with a fast recovery time. Designed for high
speed switching applications in power supplies, converters, PWM
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas
are critical and offer additional safety margin against unexpected
voltage transients.
鈥?/div>
Robust High Voltage Termination
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
MTV32N20E
TMOS POWER FET
32 AMPERES
200 VOLTS
RDS(on) = 0.075 OHM
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
廬
D
N鈥揅hannel
G
CASE 433鈥?1, Style 2
D3PAK Surface Mount
S
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Drain Current 鈥?Continuous
Drain Current
鈥?Continuous @ 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation @ 25擄C
Derate above 25擄C
Total Power Dissipation @ TA = 25擄C (1)
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 50 Vdc, VGS = 10 Vdc, Peak IL = 32 Apk, L = 1.58 mH, RG = 25
鈩?/div>
)
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient
Thermal Resistance
鈥?Junction to Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
Value
200
200
鹵20
32
19
128
180
1.44
2.0
鈥?55 to 150
810
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/擄C
Watts
擄C
mJ
TJ, Tstg
EAS
R
胃JC
R
胃JA
R
胃JA
TL
0.7
62.5
35
260
擄C/W
擄C
E鈥揊ET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
漏
Motorola TMOS
Motorola, Inc. 1996
Power MOSFET Transistor Device Data
1
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英文版
8051 Embedded Monitor Controller Flash Type with ISP
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8051 Embedded Monitor Controller Flash Type with ISP
ETC [ETC]
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TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM
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TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM
MOTOROLA [...
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N-Channel Enhancement-Mode Silicon Gate
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TMOS POWER FET 32 AMPERES 200 VOLTS
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