MTV32N20E Datasheet

IC型號：
MTV32N20E
PDF描述：
TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM
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PDF頁數(shù)：
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芯片廠家：
MOTOROLA

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SEMICONDUCTOR TECHNICAL DATA

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by MTV32N20E/D

Advance Information

TMOS E-FET.

鈩?/div>

Power Field Effect Transistor

D3PAK for Surface Mount

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage鈥揵locking capability without

degrading performance over time. In addition, this advanced TMOS

E鈥揊ET is designed to withstand high energy in the avalanche and

commutation modes. The new energy efficient design also offers a

drain鈥搕o鈥搒ource diode with a fast recovery time. Designed for high

speed switching applications in power supplies, converters, PWM

motor controls, these devices are particularly well suited for bridge

circuits where diode speed and commutating safe operating areas

are critical and offer additional safety margin against unexpected

voltage transients.

鈥?/div>

Robust High Voltage Termination

鈥?/div>

Avalanche Energy Specified

鈥?/div>

Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a Discrete

Fast Recovery Diode

鈥?/div>

Diode is Characterized for Use in Bridge Circuits

鈥?/div>

IDSS and VDS(on) Specified at Elevated Temperature

MTV32N20E

TMOS POWER FET

32 AMPERES

200 VOLTS

RDS(on) = 0.075 OHM

N鈥揅hannel Enhancement鈥揗ode Silicon Gate

廬

N鈥揅hannel

CASE 433鈥?1, Style 2

D3PAK Surface Mount

MAXIMUM RATINGS

(TC = 25擄C unless otherwise noted)

Rating

Drain鈥搕o鈥揝ource Voltage

Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?

Gate鈥搕o鈥揝ource Voltage 鈥?Continuous

Drain Current 鈥?Continuous

Drain Current

鈥?Continuous @ 100擄C

Drain Current

鈥?Single Pulse (tp

鈮?/div>

碌s)

Total Power Dissipation @ 25擄C

Derate above 25擄C

Total Power Dissipation @ TA = 25擄C (1)

Operating and Storage Temperature Range

Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C

(VDD = 50 Vdc, VGS = 10 Vdc, Peak IL = 32 Apk, L = 1.58 mH, RG = 25

鈩?/div>

)

Thermal Resistance 鈥?Junction to Case

Thermal Resistance

鈥?Junction to Ambient

Thermal Resistance

鈥?Junction to Ambient (1)

Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds

(1) When surface mounted to an FR4 board using the minimum recommended pad size.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Symbol

VDSS

VDGR

VGS

IDM

Value

200

鹵20

128

180

1.44

2.0

鈥?55 to 150

810

Unit

Vdc

Adc

Apk

Watts

W/擄C

Watts

擄C

TJ, Tstg

EAS

胃JC

胃JA

0.7

62.5

260

擄C/W

擄C

E鈥揊ET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

漏

Motorola TMOS

Motorola, Inc. 1996

Power MOSFET Transistor Device Data

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