鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25擄C
Operating and Storage Temperature
Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche
Energy 鈥?Starting TJ = 25擄C
(VDD = 25 Vdc, VGS = 10 Vpk,
IL = 75 Apk, L = 0.177 mH, RG = 25
鈩?
Thermal Resistance
鈥?Junction to Case
鈥?Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8鈥?from case for 10
seconds
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
EAS
Value
50
50
鹵20
75
65
225
150
1
鈥?5 to
175
500
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/擄C
擄C
mJ
1
2
TO鈥?20AB
CASE 221A
STYLE 5
4
http://onsemi.com
75 AMPERES
50 VOLTS
RDS(on) = 9.5 m鈩?/div>
N鈥揅hannel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTP75N05HD
LLYWW
1
Gate
2
Drain
3
Source
3
擄C/W
R
胃JC
R
胃JA
TL
1.00
62.5
260
擄C
MTP75N05HD
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
MTP75N05HD
Package
TO鈥?20AB
Shipping
50 Units/Rail
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2000
1
November, 2000 鈥?Rev. 4
Publication Order Number:
MTP75N05HD/D
next