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MTP75N03HDL Datasheet

  • MTP75N03HDL

  • TMOS POWER FET LOGIC LEVEL 75 AMPERES RDS(on) = 9.0 mOHM 25 ...

  • 238.07KB

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTP75N03HDL/D
Advanced Information
HDTMOS E-FET
鈩?/div>
High Density Power FET
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced high鈥揷ell density HDTMOS E鈥揊ET is designed to
withstand high energy in the avalanche and commutation modes.
This new energy efficient design also offers a drain鈥搕o鈥搒ource
diode with a fast recovery time. Designed for low鈥搗oltage,
high鈥搒peed switching applications in power supplies, converters
and PWM motor controls, and inductive loads. The avalanche
energy capability is specified to eliminate the guesswork in designs
where inductive loads are switched, and to offer additional safety
margin against unexpected voltage transients.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Ultra Low RDS(on), High鈥揅ell Density, HDTMOS
SPICE Parameters Available
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Avalanche Energy Specified
MTP75N03HDL
Motorola Preferred Device
TMOS POWER FET
LOGIC LEVEL
75 AMPERES
RDS(on) = 9.0 mOHM
25 VOLTS
鈩?/div>
D
G
S
CASE 221A鈥?6, Style 5
TO鈥?20AB
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage 鈥?Continuous
Gate鈥揝ource Voltage
鈥?Single Pulse (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous
鈥?Continuous @ 100擄C
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25擄C
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 75 Apk, L = 0.1 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction to Case
鈥?Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
EAS
R
胃JC
R
胃JA
TL
Value
25
25
鹵
15
鹵
20
75
59
225
150
1.0
鈥?55 to 175
280
1.0
62.5
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/擄C
擄C
mJ
擄C/W
擄C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E鈥揊ET and HDTMOS are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1995
1

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