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MTP50P03HDL Datasheet

  • MTP50P03HDL

  • TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS(on) = 0.0...

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTP50P03HDL/D
鈩?/div>
Data Sheet
HDTMOS E-FET.
鈩?/div>
Power Field Effect Transistor
Designer's
MTP50P03HDL
Motorola Preferred Device
P鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced high鈥揷ell density HDTMOS power FET is
designed to withstand high energy in the avalanche and commuta-
tion modes. The new energy efficient design also offers a
drain鈥搕o鈥搒ource diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a Dis-
crete Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
TMOS POWER FET
LOGIC LEVEL
50 AMPERES
30 VOLTS
RDS(on) = 0.025 OHM
D
G
S
CASE 221A鈥?6, Style 5
TO鈥?20AB
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage 鈥?Continuous
鈥?Non鈥揜epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous
Drain Current
鈥?Continuous @ 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25擄C
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 25 Vdc, VGS = 5.0 Vdc, Peak IL = 50 Apk, L = 1.0 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient, when mounted with the minimum recommended pad size
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
R
胃JC
R
胃JA
TL
Value
30
30
鹵
15
鹵
20
50
31
150
125
1.0
鈥?55 to 150
1250
1.0
62.5
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/擄C
擄C
mJ
擄C/W
擄C
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
Designer鈥檚, E鈥揊ET and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
漏
Motorola TMOS
Motorola, Inc. 1997
Power MOSFET Transistor Device Data
1

MTP50P03HDL 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET P 通道，金屬氧化物

  • 邏輯電平門

  • 30V

  • 50A

  • 25 毫歐 @ 25A，5V

  • 2V @ 250µA

  • 100nC @ 5V

  • 4900pF @ 25V

  • 125W

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

  • MTP50P03HDLOS

MTP50P03HDL相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    POWER FIELD EFFECT TRANSISTOR
    MOTOROLA
  • 英文版
    POWER FIELD EFFECT TRANSISTOR
    MOTOROLA [...
  • 英文版
    N-Channel Power MOSFETs, 5.5A, 350 V/400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 5.5A, 350 V/400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 5.5A, 350 V/400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 5.5A, 350 V/400V
    FAIRCHILD ...
  • 英文版
    POWER FIELD EFFECT TRANSISTOR
    MOTOROLA
  • 英文版
    POWER FIELD EFFECT TRANSISTOR
    MOTOROLA [...
  • 英文版
    TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM
    MOTOROLA
  • 英文版
    TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM
    MOTOROLA [...
  • 英文版
    TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM
    MOTOROLA [...
  • 英文版
    TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM
    MOTOROLA [...
  • 英文版
    TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm
    MOTOROLA
  • 英文版
    TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm
    MOTOROLA [...
  • 英文版
    TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM
    MOTOROLA
  • 英文版
    TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM
    MOTOROLA [...
  • 英文版
    TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM
    MOTOROLA
  • 英文版
    TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM
    MOTOROLA [...
  • 英文版
    TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM
    MOTOROLA
  • 英文版
    isc N-Channel MOSFET Transistor
    ISC [Incha...

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