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MTP3N120E Datasheet

  • MTP3N120E

  • TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM

  • 255.04KB

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTP3N120E/D
Designer's Data Sheet
TMOS E-FET.
鈩?/div>
Power Field Effect Transistor
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced high鈥搗oltage TMOS E鈥揊ET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain鈥搕o鈥搒ource diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls, and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
鈥?/div>
Avalanche Energy Capability Specified at Elevated
Temperature
鈥?/div>
Low Stored Gate Charge for Efficient Switching
鈥?/div>
Internal Source鈥搕o鈥揇rain Diode Designed to Replace External
Zener Transient Suppressor Absorbs High Energy in the
Avalanche Mode
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to
Discrete Fast Recovery Diode
* See App. Note AN1327 鈥?Very Wide Input Voltage Range;
Off鈥搇ine Flyback Switching Power Supply
G
S
MTP3N120E
Motorola Preferred Device
TMOS POWER FET
3.0 AMPERES
1200 VOLTS
RDS(on) = 5.0 OHM
廬
D
CASE 221A鈥?6, Style 5
TO鈥?20AB
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage 鈥?Continuous
Gate鈥揝ource Voltage
鈥?Non鈥揜epetitive (tp
鈮?/div>
50 ms)
Drain Current 鈥?Continuous @ 25擄C
Drain Current
鈥?Continuous @ 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25擄C
Operating and Storage Temperature Range
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
Value
1200
1200
鹵
20
鹵
40
3.0
2.2
11
125
1.0
鈥?55 to 150
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/擄C
擄C
UNCLAMPED DRAIN鈥揟O鈥揝OURCE AVALANCHE CHARACTERISTICS
(TJ
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 100 Vdc, VGS = 10 Vdc, PEAK IL = 4.5 Apk, L = 10 mH, RG = 25
鈩?
t
150擄C)
EAS
101
mJ
THERMAL CHARACTERISTICS
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
E鈥揊ET and Designer鈥檚 are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
R
胃JC
R
胃JA
TL
1.0
62.5
260
擄C/W
擄C
REV 1
漏
Motorola TMOS
Motorola, Inc. 1995
Power MOSFET Transistor Device Data
1

MTP3N120E相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET
    STMICROELECTRONICS
  • 英文版
    TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM
    MOTOROLA
  • 英文版
    TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM
    MOTOROLA [...
  • 英文版
    N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET
    STMICROELECTRON...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 120V V(BR)DSS | 3A I(D) | ...
    ETC
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD ...
  • 英文版
    TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
    MOTOROLA
  • 英文版
    TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
    MOTOROLA [...
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-...
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET
    STMICROELECTRON...
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM
    MOTOROLA
  • 英文版
    TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM
    MOTOROLA [...
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...

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