MTP3055VL
June 2000
DISTRIBUTION GROUP*
MTP3055VL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
This N-Channel Logic Level MOSFET has been designed
specifically for low voltage, high speed switching
applications i.e. power supplies and power motor
controls.
This MOSFET features faster switching and lower gate
charge than other MOSFETs with comparable R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies).
Features
鈥?12 A, 60 V. R
DS(ON)
= 0.18
鈩?/div>
@ V
GS
= 5 V
鈥?Critical DC electrical parameters specified at elevated
temperature.
鈥?Low drive requirements allowing operation directly from
logic drivers. Vgs(th) < 2 V.
鈥?Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
鈥?175擄C maximum junction temperature rating.
D
G
D
TO-220
S
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
Drain-Source Voltage
T
C
= 25擄C unless otherwise noted
Parameter
Ratings
60
鹵
15
12
42
48
0.32
-65 to +175
Units
V
V
A
W
W/
擄
C
擄
C
擄
C/W
擄
C/W
Power Dissipation @ T
C
= 25
擄
C
Derate above 25
擄
C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃
JC
R
胃
JA
Thermal Resistance, Junction-to- Case
Thermal Resistance, Junction-to- Ambient
(Note 1)
3.13
62.5
Package Outlines and Ordering Information
Device Marking
MTP3055VL
Device
MTP3055VL
Package Information
Rails/Tubes
Quantity
45 units
*
Die and manufacturing source subject to change without prior notification
.
錚?999
Fairchild Semiconductor Corporation
MTP3055VL Rev. A1
1
2
3
