MTP2P50E
Preferred Device
Power MOSFET
2 Amps, 500 Volts
P鈥揅hannel TO鈥?20
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage鈥揵locking capability without degrading
performance over time. In addition, this Power MOSFET is designed
to withstand high energy in the avalanche and commutation modes.
The energy efficient design also offers a drain鈥搕o鈥搒ource diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
鈥?/div>
Robust High Voltage Termination
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage
鈥?Continuous
鈥?Non鈥揜epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous
Drain Current
鈥?Continuous @ 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25擄C
Operating and Storage Temperature
Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche
Energy 鈥?Starting TJ = 25擄C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL = 4.0 Apk, L = 10 mH, RG = 25
鈩?
Thermal Resistance
鈥?Junction to Case
鈥?Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8鈥?from case for 10
seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
Value
500
500
鹵20
鹵40
2.0
1.6
6.0
75
0.6
鈥?5 to
150
80
Unit
Vdc
4
Vdc
Vdc
Vpk
Adc
Apk
1
Watts
W/擄C
擄C
mJ
MTP2P50E
LL
Y
WW
2
3
http://onsemi.com
2 AMPERES
500 VOLTS
RDS(on) = 6
鈩?/div>
P鈥揅hannel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
TO鈥?20AB
CASE 221A
STYLE 5
MTP2P50E
LLYWW
3
Source
2
Drain
1
Gate
= Device Code
= Location Code
= Year
= Work Week
擄C/W
R
胃JC
R
胃JA
TL
1.67
62.5
260
擄C
ORDERING INFORMATION
Device
MTP2P50E
Package
TO鈥?20AB
Shipping
50 Units/Rail
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2000
1
November, 2000 鈥?Rev. 3
Publication Order Number:
MTP2P50E/D
MTP2P50E 產(chǎn)品屬性
50
分離式半導(dǎo)體產(chǎn)品
FET - 單
-
MOSFET P 通道，金屬氧化物
標(biāo)準(zhǔn)型
500V
2A
6 歐姆 @ 1A，10V
4V @ 250µA
27nC @ 10V
1183pF @ 25V
75W
通孔
TO-220-3
TO-220AB
管件
MTP2P50EOS
MTP2P50E相關(guān)型號PDF文件下載
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型號
版本
描述
廠商
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英文版
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM
-
英文版
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM
MOTOROLA [...
-
英文版
POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SI...
-
英文版
POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SI...
MOTOROLA [...
-
英文版
N-Channel Power MOSFETs, 2.25A, 350-400V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 2.25A, 350-400V
FAIRCHILD ...
-
英文版
N-Channel Power MOSFETs, 2.25A, 350-400V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 2.25A, 350-400V
FAIRCHILD ...
-
英文版
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
FAIRCHILD ...
-
英文版
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
FAIRCHILD ...
-
英文版
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
-
英文版
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
MOTOROLA [...
-
英文版
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM
-
英文版
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM
MOTOROLA [...
-
英文版
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
-
英文版
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
MOTOROLA [...
-
英文版
N-Channel Power MOSFETs, 20 A, 60-100 V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 20 A, 60-100 V
FAIRCHILD ...
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