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MTP2N40E Datasheet

  • MTP2N40E

  • TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM

  • 8頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTP2N40E/D
鈩?/div>
Data Sheet
TMOS E-FET.
鈩?/div>
Power Field Effect Transistor
Designer's
MTP2N40E
Motorola Preferred Device
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage鈥揵locking capability without
degrading performance over time. In addition, this advanced TMOS
E鈥揊ET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain鈥搕o鈥搒ource diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
鈥?/div>
Robust High Voltage Termination
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
G
S
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
R
胃JC
R
胃JA
TL
TMOS POWER FET
2.0 AMPERES
400 VOLTS
RDS(on) = 3.5 OHM
廬
D
CASE 221A鈥?6, Style 5
TO鈥?20AB
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage 鈥?Continuous
Gate鈥揝ource Voltage
鈥?Non鈥揜epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous
Drain Current
鈥?Continuous @ 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25擄C
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 3.0 Apk, L = 10 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
Value
400
400
鹵
20
鹵
40
2.0
1.5
6.0
40
0.32
鈥?55 to 150
45
3.13
62.5
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/擄C
擄C
mJ
擄C/W
擄C
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
E鈥揊ET and Designer鈥檚 is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
漏
Motorola
Inc. 1995
Power MOSFET Transistor Device Data
Motorola,
TMOS
1

MTP2N40E相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
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  • 英文版
    TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM
    MOTOROLA
  • 英文版
    TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM
    MOTOROLA [...
  • 英文版
    POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SI...
    MOTOROLA
  • 英文版
    POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SI...
    MOTOROLA [...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
    FAIRCHILD ...
  • 英文版
    TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
    MOTOROLA
  • 英文版
    TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
    MOTOROLA [...
  • 英文版
    TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM
    MOTOROLA
  • 英文版
    TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM
    MOTOROLA [...
  • 英文版
    TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
    MOTOROLA
  • 英文版
    TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
    MOTOROLA [...
  • 英文版
    N-Channel Power MOSFETs, 20 A, 60-100 V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 20 A, 60-100 V
    FAIRCHILD ...

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