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MTP29N15E Datasheet

  • MTP29N15E

  • TMOS POWER FET 29 AMPERES 150 VOLTS RDS(on) = 0.07 OHM

  • 79.10KB

  • 4頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTP29N15E/D
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TMOS E-FET.
鈩?/div>
Power Field Effect Transistor
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced TMOS E鈥揊ET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain鈥搕o鈥搒ource diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
MTP29N15E
TMOS POWER FET
29 AMPERES
150 VOLTS
RDS(on) = 0.07 OHM
廬
N鈥揅hannel
D
G
S
CASE 221A鈥?6,
TO鈥?20AB
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Gate鈥搕o鈥揝ource Voltage
鈥?Non鈥揜epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous
Drain Current
鈥?Continuous @ 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25擄C
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?STARTING TJ = 25擄C
(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 29 Apk, L = 1.0 mH, RG = 25
W
)
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
E鈥揊ET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
R
胃JC
R
胃JA
TL
Value
150
150
鹵
20
鹵
40
29
19
102
125
1.0
鈥?55 to 150
421
1.0
62.5
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/擄C
擄C
mJ
擄C/W
擄C
漏
Motorola TMOS
Motorola, Inc. 1997
Power MOSFET Transistor Device Data
1

MTP29N15E相關(guān)型號(hào)PDF文件下載

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  • 英文版
    TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM
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  • 英文版
    TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM
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    FAIRCHILD
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    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
    FAIRCHILD ...
  • 英文版
    TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
    MOTOROLA
  • 英文版
    TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
    MOTOROLA [...
  • 英文版
    TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM
    MOTOROLA
  • 英文版
    TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM
    MOTOROLA [...
  • 英文版
    TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
    MOTOROLA
  • 英文版
    TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
    MOTOROLA [...
  • 英文版
    N-Channel Power MOSFETs, 20 A, 60-100 V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 20 A, 60-100 V
    FAIRCHILD ...

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