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MTP16N25E Datasheet

  • MTP16N25E

  • TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM

  • 225.22KB

  • 8頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTP16N25E/D
鈩?/div>
Data Sheet
TMOS E-FET.
鈩?/div>
Power Field Effect Transistor
Designer's
MTP16N25E
Motorola Preferred Device
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced TMOS E鈥揊ET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain鈥搕o鈥搒ource diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
TMOS POWER FET
16 AMPERES
250 VOLTS
RDS(on) = 0.25 OHM
D
G
S
CASE 221A鈥?6, Style 5
TO鈥?20AB
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage 鈥?Continuous
鈥?Non鈥揜epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous
鈥?Continuous @ 100擄C
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 80 Vdc, VGS = 10 Vdc, IL = 16 Apk, L = 3.0 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction to Case
鈥?Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
R
胃JC
R
胃JA
TL
Value
250
250
20
40
16
10
56
125
1.0
鈥?55 to 150
384
1.0
62.5
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/擄C
擄C
mJ
擄C/W
擄C
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
E鈥揊ET and Designer鈥檚 are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola TMOS
Motorola, Inc. 1995
Power MOSFET Transistor Device Data
1

MTP16N25E相關(guān)型號(hào)PDF文件下載

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  • 英文版
    TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm
    MOTOROLA
  • 英文版
    TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm
    MOTOROLA [...
  • 英文版
    TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM
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    TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM
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    Power Field Effect Transister N-Channel Enhancement Mode Sil...
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  • 英文版
    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD ...
  • 英文版
    POWER FIELD EFFECT TRANSISTOR
    MOTOROLA
  • 英文版
    POWER FIELD EFFECT TRANSISTOR
    MOTOROLA [...
  • 英文版
    POWER FIELD EFFECT TRANSISTOR
    MOTOROLA
  • 英文版
    POWER FIELD EFFECT TRANSISTOR
    MOTOROLA [...
  • 英文版
    TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
    MOTOROLA
  • 英文版
    TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
    MOTOROLA [...
  • 英文版
    TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
    MOTOROLA
  • 英文版
    TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
    MOTOROLA [...
  • 英文版
    N-Channel Power MOSFETs, 12A, 150-200 V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 12A, 150-200 V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 12A, 150-200 V
    FAIRCHILD

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