AV一二三四色人妻综合,国产在线AⅤ视频

High Density Power FET

N鈥揅hannel Enhancement鈥揗ode Silicon Gate

This advanced high cell density HDTMOS power FET is

designed to withstand high energy in the avalanche and commuta-

tion modes. This new energy efficient design also offers a

drain鈥搕o鈥搒ource diode with a fast recovery time. Designed for low

voltage, high speed switching applications in power supplies,

converters and PWM motor controls, these devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating area are critical and offer additional safety margin

against unexpected voltage transients.

鈥?/div>

Avalanche Energy Specified

鈥?/div>

Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

鈥?/div>

Diode Is Characterized for Use In Bridge Circuits

鈥?/div>

IDSS and VDS(on) Specified at Elevated Temperature

MTP1302

TMOS POWER FET

42 AMPERES

30 VOLTS

RDS(on) = 22 m

W

鈩?/div>

CASE 221A鈥?6

TO鈥?20AB

MAXIMUM RATINGS

(TC = 25擄C unless otherwise noted)

Rating

Drain鈥搕o鈥揝ource Voltage

Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?

Gate鈥搕o鈥揝ource Voltage 鈥?Continuous

鈥?Non鈥揜epetitive (tp

鈮?/div>

10 ms)

Drain Current 鈥?Continuous

Drain Current

鈥?Continuous @ 100擄C

Drain Current

鈥?Single Pulse (tp

鈮?/div>

10

碌s)

Total Power Dissipation

Derate above 25擄C

Operating and Storage Temperature Range

Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C

(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 42 Apk, L = 0.25 mH, RG = 25

鈩?

Thermal Resistance

Junction to Case

Junction鈥搕o鈥揂mbient

Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from Case for 5 seconds

Symbol

VDSS

VDGR

VGS

VGSM

ID

IDM

PD

TJ, Tstg

EAS

Value

30

鹵

20

鹵

20

42

20

126

74

0.592

鈥?55 to 150

220

Unit

Vdc

Vpk

Adc

Apk

Watts

W/擄C

擄C

mJ

擄C/W

R

胃JC

R

胃JA

TL

1.67

62.5

260

擄C

This document contains information on a new product. Specifications and information herein are subject to change without notice.

E鈥揊ET and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

漏

Motorola, Inc. 1997

Motorola TMOS Power MOSFET Transistor Device Data

1

型號

版本

描述

廠商

下載
MTP1302

英文版

TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm

MTP1302
MTP1302

英文版

TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm

MOTOROLA [...

MTP1302
MTP1306

英文版

TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM

MTP1306
MTP1306

英文版

TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM

MOTOROLA [...

MTP1306
MTP1N60

英文版

Power Field Effect Transister N-Channel Enhancement Mode Sil...

MTP1N60
MTP10N06

英文版

N-Channel Power MOSFETs, 11 A, 60-100 V

FAIRCHILD

MTP10N06
MTP10N06

英文版

N-Channel Power MOSFETs, 11 A, 60-100 V

FAIRCHILD ...

MTP10N06
MTP10N10

英文版

N-Channel Power MOSFETs, 11 A, 60-100 V

FAIRCHILD

MTP10N10
MTP10N10

英文版

N-Channel Power MOSFETs, 11 A, 60-100 V

FAIRCHILD ...

MTP10N10
MTP10N15

英文版

POWER FIELD EFFECT TRANSISTOR

MTP10N15
MTP10N15

英文版

POWER FIELD EFFECT TRANSISTOR

MOTOROLA [...

MTP10N15
MTP10N25

英文版

POWER FIELD EFFECT TRANSISTOR

MTP10N25
MTP10N25

英文版

POWER FIELD EFFECT TRANSISTOR

MOTOROLA [...

MTP10N25
MTP10N40

英文版

TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS

MTP10N40
MTP10N40

英文版

TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS

MOTOROLA [...

MTP10N40
MTP12N06

英文版

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM

MTP12N06
MTP12N06

英文版

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM

MOTOROLA [...

MTP12N06
MTP12N18

英文版

N-Channel Power MOSFETs, 12A, 150-200 V

FAIRCHILD

MTP12N18
MTP12N18

英文版

N-Channel Power MOSFETs, 12A, 150-200 V

FAIRCHILD ...

MTP12N18
MTP12N20

英文版

N-Channel Power MOSFETs, 12A, 150-200 V

FAIRCHILD

MTP12N20

MTP1302 Datasheet

PDF預(yù)覽

MTP1302相關(guān)型號PDF文件下載

您可能感興趣的PDF文件資料

熱門IC型號推薦

MTP1302 Datasheet

PDF預(yù)覽

MTP1302相關(guān)型號PDF文件下載

您可能感興趣的PDF文件資料

熱門IC型號推薦

建議反饋

PDF糾錯X