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MTP12P10 Datasheet

  • MTP12P10

  • TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHM

  • 6頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTP12P10/D
Power Field Effect Transistor
This TMOS Power FET is designed for medium voltage, high
speed power switching applications such as switching regulators,
converters, solenoid and relay drivers.
鈥?/div>
Silicon Gate for Fast Switching Speeds 鈥?Switching Times
Specified at 100擄C
鈥?/div>
Designer鈥檚 Data 鈥?IDSS, VDS(on), VGS(th) and SOA Specified
at Elevated Temperature
鈥?/div>
Rugged 鈥?SOA is Power Dissipation Limited
鈥?/div>
Source鈥搕o鈥揇rain Diode Characterized for Use With Inductive Loads
鈩?/div>
Data Sheet
MTP12P10
TMOS POWER FET
12 AMPERES
100 VOLTS
RDS(on) = 0.3 OHM
P鈥揅hannel Enhancement鈥揗ode Silicon Gate
廬
D
G
S
CASE 221A鈥?6, Style 5
TO鈥?20AB
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage 鈥?Continuous
Gate鈥揝ource Voltage
鈥?Non鈥搑epetitive (tp
鈮?/div>
50
碌s)
Drain Current 鈥?Continuous
Drain Current
鈥?Pulsed
Total Power Dissipation
Derate above 25擄C
Operating and Storage Temperature Range
Symbol
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
TJ, Tstg
Value
100
100
鹵
20
鹵
40
12
28
75
0.6
鈥?65 to 150
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Watts
W/擄C
擄C
THERMAL CHARACTERISTICS
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient擄
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
R
胃JC
R
胃JA
TL
1.67
62.5
260
擄C/W
擄C
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
Designer鈥檚 is a trademark of Motorola, Inc.
REV 1
漏
Motorola TMOS
Motorola, Inc. 1996
Power MOSFET Transistor Device Data
1

MTP12P10 產(chǎn)品屬性

  • ON Semiconductor

  • MOSFET

  • P-Channel

  • - 100 V

  • +/- 20 V

  • 12 A

  • 0.3 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-220AB

  • Tube

  • 150 ns

  • 2 S

  • - 65 C

  • 75 W

  • 150 ns

  • 50

  • 150 ns

MTP12P10相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm
    MOTOROLA
  • 英文版
    TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm
    MOTOROLA [...
  • 英文版
    TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM
    MOTOROLA
  • 英文版
    TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM
    MOTOROLA [...
  • 英文版
    Power Field Effect Transister N-Channel Enhancement Mode Sil...
    MOTOROLA
  • 英文版
    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD ...
  • 英文版
    POWER FIELD EFFECT TRANSISTOR
    MOTOROLA
  • 英文版
    POWER FIELD EFFECT TRANSISTOR
    MOTOROLA [...
  • 英文版
    POWER FIELD EFFECT TRANSISTOR
    MOTOROLA
  • 英文版
    POWER FIELD EFFECT TRANSISTOR
    MOTOROLA [...
  • 英文版
    TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
    MOTOROLA
  • 英文版
    TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
    MOTOROLA [...
  • 英文版
    TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
    MOTOROLA
  • 英文版
    TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
    MOTOROLA [...
  • 英文版
    N-Channel Power MOSFETs, 12A, 150-200 V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 12A, 150-200 V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 12A, 150-200 V
    FAIRCHILD

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