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MTP10N10E Datasheet

  • MTP10N10E

  • TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTP10N10E/D
TMOS IV
Power Field Effect Transistor
This advanced 鈥淓鈥?series of TMOS power MOSFETs is designed
to withstand high energy in the avalanche and commutation
modes. These new energy efficient devices also offer drain鈥搕o鈥?/div>
source diodes with fast recovery times. Designed for low voltage,
high speed switching applications in power supplies, converters
and PWM motor controls, these devices are particularly well suited
for bridge circuits where diode speed and commutating safe
operating area are critical, and offer additional safety margin
against unexpected voltage transients.
鈥?/div>
Internal Source鈥搕o鈥揇rain Diode Designed to Replace External
Zener Transient Suppressor 鈥?Absorbs High Energy in the
Avalanche Mode 鈥?Unclamped Inductive Switching (UIS)
Energy Capability Specified at 100擄C
鈥?/div>
Commutating Safe Operating Area (CSOA) Specified for Use
in Half and Full Bridge Circuits
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈩?/div>
Data Sheet
MTP10N10E
TMOS POWER FETs
10 AMPERES
100 VOLTS
RDS(on) = 0.25 OHM
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
廬
D
G
S
CASE 221A鈥?6, Style 5
TO鈥?20AB
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Drain Current
鈥?Pulsed
Total Power Dissipation
Derate above 25擄C
Operating and Storage Temperature Range
Symbol
VDSS
VDGR
VGS
ID
IDM
PD
TJ, Tstg
Value
100
100
鹵
20
10
25
75
0.6
鈥?65 to 150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
THERMAL CHARACTERISTICS
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient擄
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 5 seconds
R
胃JC
R
胃JA
TL
1.67
62.5
275
擄C/W
擄C
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
Designer鈥檚 is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
漏
Motorola TMOS
Motorola, Inc. 1996
Power MOSFET Transistor Device Data
1

MTP10N10E相關(guān)型號(hào)PDF文件下載

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  • 英文版
    TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm
    MOTOROLA
  • 英文版
    TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm
    MOTOROLA [...
  • 英文版
    TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM
    MOTOROLA
  • 英文版
    TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM
    MOTOROLA [...
  • 英文版
    Power Field Effect Transister N-Channel Enhancement Mode Sil...
    MOTOROLA
  • 英文版
    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD ...
  • 英文版
    POWER FIELD EFFECT TRANSISTOR
    MOTOROLA
  • 英文版
    POWER FIELD EFFECT TRANSISTOR
    MOTOROLA [...
  • 英文版
    POWER FIELD EFFECT TRANSISTOR
    MOTOROLA
  • 英文版
    POWER FIELD EFFECT TRANSISTOR
    MOTOROLA [...
  • 英文版
    TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
    MOTOROLA
  • 英文版
    TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
    MOTOROLA [...
  • 英文版
    TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
    MOTOROLA
  • 英文版
    TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
    MOTOROLA [...
  • 英文版
    N-Channel Power MOSFETs, 12A, 150-200 V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 12A, 150-200 V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 12A, 150-200 V
    FAIRCHILD

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