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MTP10N10EL Datasheet

  • MTP10N10EL

  • TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS

  • 224.13KB

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTP10N10EL/D
鈩?/div>
Data Sheet
Logic Level TMOS E-FET.
鈩?/div>
Power Field Effect Transistor
Designer's
MTP10N10EL
Motorola Preferred Device
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced TMOS power FET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a drain鈥搕o鈥搒ource diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
TMOS POWER FET
10 AMPERES
100 VOLTS
RDS(on) = 0.22 OHMS
廬
D
G
S
CASE 221A鈥?6, Style 5
TO鈥?20AB
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
鈥?Non鈥揜epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous @ TC = 25擄C
鈥?Continuous @ TC = 100擄C
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation @ TC = 25擄C
Derate above 25擄C
Total Power Dissipation @ TC = 25擄C (1)
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 25 Vdc, VGS = 5.0 Vdc, Peak IL = 10 Adc, L = 1.0 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction to Case擄
鈥?Junction to Ambient
鈥?Junction to Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
Value
100
100
鹵
15
鹵
20
10
6.0
35
40
0.32
1.75
鈥?55 to 150
50
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/擄C
Watts
擄C
mJ
TJ, Tstg
EAS
R
胃JC
R
胃JA
R
胃JA
TL
3.13
100
71.4
260
擄C/W
擄C
E鈥揊ET and Designer鈥檚 are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
漏
Motorola TMOS
Motorola, Inc. 1996
Power MOSFET Transistor Device Data
1

MTP10N10EL 產(chǎn)品屬性

  • ON Semiconductor

  • MOSFET

  • N-Channel

  • 100 V

  • +/- 15 V

  • 10 A

  • 0.22 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-220AB

  • Tube

  • 38 ns

  • 7.9 S

  • - 55 C

  • 40 W

  • 74 ns

  • 50

  • 17 ns

MTP10N10EL相關(guān)型號PDF文件下載

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  • 英文版
    TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm
    MOTOROLA
  • 英文版
    TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm
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    TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM
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    POWER FIELD EFFECT TRANSISTOR
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    POWER FIELD EFFECT TRANSISTOR
    MOTOROLA [...
  • 英文版
    POWER FIELD EFFECT TRANSISTOR
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  • 英文版
    POWER FIELD EFFECT TRANSISTOR
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  • 英文版
    TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
    MOTOROLA
  • 英文版
    TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
    MOTOROLA [...
  • 英文版
    TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
    MOTOROLA
  • 英文版
    TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
    MOTOROLA [...
  • 英文版
    N-Channel Power MOSFETs, 12A, 150-200 V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 12A, 150-200 V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 12A, 150-200 V
    FAIRCHILD

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