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MTE30N50E Datasheet

  • MTE30N50E

  • TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM

  • 231.85KB

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTE30N50E/D
Advance Information
ISOTOP
鈩?/div>
TMOS E-FET.
鈩?/div>
Power Field Effect Transistor
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced TMOS E鈥揊ET is designed to withstand high
energy in the avalanche mode and switch efficiently. This new
energy design also offers a drain鈥搕o鈥搒ource diode with fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, PWM motor controls, and other
inductive loads. The avalanche energy capability is specified to
eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients.
鈥?/div>
2500 V RMS Isolated ISOTOP Package
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
Very Low Internal Parasitic Inductance
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
鈥?/div>
U.L. Recognized, File #E69369
D
MTE30N50E
Motorola Preferred Device
TMOS POWER FET
30 AMPERES
500 VOLTS
RDS(on) = 0.150 OHM
廬
4
1
2
3
G
SOT鈥?27B
S
1.
2.
3.
4.
Source
Gate
Drain
Source 2
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
鈥?Non鈥揜epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous @ 25擄C
Drain Current
鈥?Continuous @ 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation @ 25擄C
Derate above 25擄C
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL= 30 Apk, L = 10 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
E鈥揊ET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
ISOTOP is a trademark of SGS鈥揟HOMSON Microelectronics.
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
3000
R
胃JC
R
胃JA
TL
0.5
62.5
260
擄C/W
擄C
Value
500
500
鹵
20
鹵
40
30
12
80
250
2.0
鈥?55 to 150
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/擄C
擄C
mJ
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred
devices are Motorola recommended choices for future use and best overall value.
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
1

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