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MTE215N10E Datasheet

  • MTE215N10E

  • TMOS POWER FET 215 AMPERES 100 VOLTS RDS(on) = 0.0055 OHM

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTE215N10E/D
鈩?/div>
Data Sheet
ISOTOP
鈩?/div>
TMOS E-FET.
鈩?/div>
Power Field Effect Transistor
Designer's
MTE215N10E
Motorola Preferred Device
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced high voltage TMOS E鈥揊ET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain鈥搕o鈥搒ource diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
鈥?/div>
2500 V RMS Isolated Isotop Package
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
Very Low Internal Parasitic Inductance
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
鈥?/div>
U. L. Recognized, File #E69369
G
S
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
TMOS POWER FET
215 AMPERES
100 VOLTS
RDS(on) = 0.0055 OHM
廬
4
1
2
3
D
SOT鈥?27B
1.
2.
3.
4.
Source
Gate
Drain
Source 2
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage 鈥?Continuous
Gate鈥揝ource Voltage
鈥?Non鈥揜epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous
Drain Current
鈥?Continuous @ 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25擄C
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy
(VDD = 25 Vdc, VGS = 10 Vdc, IL = 215 Apk, L = 0.017 mH, RG = 25
鈩?)
RMS Isolation Voltage
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
Value
100
100
鹵
20
鹵
40
215
136
860
460
3.70
鈥?40 to 150
400
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Watts
W/擄C
擄C
mJ
VISO
R
胃JC
R
胃JA
TL
2500
0.28
62.5
260
Vac
擄C/W
擄C
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
E鈥揊ET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
ISOTOP is a trademark of SGS鈥揟HOMSON Microelectronics.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1995
1

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