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MTE125N20E Datasheet

  • MTE125N20E

  • TMOS POWER FET 125 AMPERES 200 VOLTS RDS(on) = 0.015 OHM

  • 230.99KB

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTE125N20E/D
鈩?/div>
Data Sheet
ISOTOP
鈩?/div>
TMOS E-FET.
鈩?/div>
Power Field Effect Transistor
Designer's
MTE125N20E
Motorola Preferred Device
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced high voltage TMOS E鈥揊ET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain鈥搕o鈥搒ource diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
鈥?/div>
2500 V RMS Isolated Isotop Package
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
Very Low Internal Parasitic Inductance
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
鈥?/div>
U.L. Recognized, File #E69369
G
S
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
EAS
TMOS POWER FET
125 AMPERES
200 VOLTS
RDS(on) = 0.015 OHM
廬
4
1
2
3
D
SOT鈥?27B
1.
2.
3.
4.
Source
Gate
Drain
Source 2
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage 鈥?Continuous
Drain Current 鈥?Continuous
Drain Current
鈥?Continuous @ 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25擄C
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy
(VDD = 50 Vdc, VGS = 10 Vdc, IL = 125 Apk, L = 0.05mH, RG = 25
鈩?
RMS Isolation Voltage
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
Value
200
200
鹵
20
125
79
500
460
3.70
鈥?40 to 150
400
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
mJ
VISO
R
胃JC
R
胃JA
TL
2500
0.28
62.5
260
Vac
擄C/W
擄C
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
E鈥揊ET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
ISOTOP is a trademark of SGS鈥揟HOMSON Microelectronics.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1995
1

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