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MTDF1C02HD Datasheet

  • MTDF1C02HD

  • COMPLEMENTARY DUAL TMOS POWER FET

  • 14頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTDF1C02HD/D
鈩?/div>
Data Sheet
Medium Power Surface Mount Products
Complementary TMOS
Field Effect Transistors
MTDF1C02HD
Motorola Preferred Device
Micro8鈩?devices are an advanced series of power MOSFETs
which utilize Motorola鈥檚 High Cell Density HDTMOS process to
achieve lowest possible on鈥搑esistance per silicon area. They are
capable of withstanding high energy in the avalanche and commuta-
tion modes and the drain鈥搕o鈥搒ource diode has a very low reverse
鈩?/div>
recovery time. Micro8鈩?devices are designed for use in low voltage,
high speed switching applications where power efficiency is important.
Typical applications are dc鈥揹c converters, and power management in
portable and battery powered products such as computers, printers,
7
8
cellular and cordless phones. They can also be used for low voltage
D
N鈥揅hannel
motor controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the guesswork
in designs where inductive loads are switched and offer additional
2
safety margin against unexpected voltage transients.
G
鈥?/div>
Miniature Micro8 Surface Mount Package 鈥?Saves Board Space
鈥?/div>
Extremely Low Profile (<1.1mm) for thin applications such as
PCMCIA cards
1
S
鈥?/div>
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
5
6
鈥?/div>
Logic Level Gate Drive 鈥?Can Be Driven by Logic ICs
D
P鈥揅hannel
鈥?/div>
Diode Is Characterized for Use In Bridge Circuits
鈥?/div>
Diode Exhibits High Speed, With Soft Recovery
鈥?/div>
IDSS Specified at Elevated Temperature
4
鈥?/div>
Avalanche Energy Specified
G
鈥?/div>
Mounting Information for Micro8 Package Provided
3
S
COMPLEMENTARY
DUAL TMOS POWER FET
20 VOLTS
RDS(on) = 0.120 OHM
1.7 AMPERES
(N鈥揅HANNEL)
RDS(on) = 0.175 OHM
1.6 AMPERES
(P鈥揅HANNEL)
CASE 846A鈥?2, Style 2
Micro8
Source 1
Gate 1
Source 2
Gate 2
1
2
3
4
8
7
6
5
Drain 1
Drain 1
Drain 2
Drain 2
Top View
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Negative sign for P鈥揅hannel devices omitted for clarity
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M
W
)
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Operating and Storage Temperature Range
N鈥揅hannel
P鈥揅hannel
N鈥揅hannel
P鈥揅hannel
N鈥揅hannel
P鈥揅hannel
Symbol
VDSS
VDGR
VGS
TJ and Tstg
Max
20
20
20
20
鹵8.0
鹵8.0
鈥?55 to 150
Unit
V
V
V
擄C
DEVICE MARKING
CA
ORDERING INFORMATION
Device
MTDF1C02HD
Reel Size
13鈥?/div>
Tape Width
12 mm embossed tape
Quantity
4000 units
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International Rectifier.
Preferred
devices are Motorola recommended choices for future use and best overall value.
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1997
1

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