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MTD5P06E Datasheet

  • MTD5P06E

  • TMOS POWER FET 5.0 AMPERES 60 VOLTS RDS(on) = 0.55 OHM

  • 10頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTD5P06E/D
鈩?/div>
Data Sheet
TMOS E-FET.
鈩?/div>
Power Field Effect Transistor
DPAK for Surface Mount
Designer's
MTD5P06E
Motorola Preferred Device
P鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced TMOS E鈥揊ET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain鈥搕o鈥搒ource diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
鈥?/div>
Surface Mount Package Available in 16 mm, 13鈥搃nch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number
鈥?/div>
Replaces MTD4P05 and MTD4P06E
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage 鈥?Continuous
Gate鈥揝ource Voltage
鈥?Non鈥揜epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous
鈥?Continuous @ 100擄C
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25擄C
Total Power Dissipation @ TA = 25擄C, when mounted to minimum recommended pad size
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 25 Vdc, VGS = 10 Vdc, IL = 5.0 Apk, L = 10 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction to Case
鈥?Junction to Ambient
鈥?Junction to Ambient, when mounted to minimum recommended pad size
Maximum Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TMOS POWER FET
5.0 AMPERES
60 VOLTS
RDS(on) = 0.55 OHM
廬
D
G
S
CASE 369A鈥?3, Style 2
DPAK
Value
60
60
鹵
20
鹵
30
5.0
3.8
15
40
0.32
1.75
鈥?55 to 150
125
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/擄C
Watts
擄C
mJ
TJ, Tstg
EAS
R
胃JC
R
胃JA
R
胃JA
TL
3.13
100
71.4
260
擄C/W
擄C
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
E鈥揊ET and Designer鈥檚 are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
漏
Motorola TMOS
Motorola, Inc. 1995
Power MOSFET Transistor Device Data
1

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