WaveFET鈩?devices are an advanced series of power MOSFETs which utilize Motorola鈥檚
latest MOSFET technology process to achieve the lowest possible on鈥搑esistance per silicon
area. They are capable of withstanding high energy in the avalanche and commutation
modes and the drain鈥搕o鈥搒ource diode has a very low reverse recovery time. WaveFET鈩?/div>
devices are designed for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc鈥揹c converters, and power management
in portable and battery powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass storage products
such as disk drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
鈥?/div>
Characterized Over a Wide Range of Power Ratings
鈥?/div>
Ultralow RDS(on) Provides Higher Efficiency and
Extends Battery Life in Portable Applications
鈥?/div>
Logic Level Gate Drive 鈥?Can Be Driven by
Logic ICs
鈥?/div>
Diode Is Characterized for Use In Bridge Circuits
鈥?/div>
Diode Exhibits High Speed, With Soft Recovery
鈥?/div>
IDSS Specified at Elevated Temperature
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Industry Standard DPAK Surface Mount Package
D
SINGLE TMOS
POWER MOSFET
30 VOLTS
RDS(on) = 10 m
W
CASE 369A鈥?13, Style 2
DPAK
G
S
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise specified)
Parameter
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage
Gate鈥搕o鈥揝ource Voltage
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 25 Vdc, VGS = 10 Vdc, L = 126 mH, IL(pk) = 3.0 A, VDS = 30 Vdc)
Symbol
VDSS
VDGR
VGS
TJ, Tstg
EAS
500
Value
30
30
鹵
20
鈥?55 to 150
Unit
Vdc
Vdc
Vdc
擄C
mJ
DEVICE MARKING
D3302
Device
MTD3302T4
ORDERING INFORMATION
Reel Size
13鈥?/div>
Tape Width
12 mm embossed tape
Quantity
2500
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
HDTMOS and WaveFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1997
1
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英文版
Coaxial Transceiver Interface
ETC
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Coaxial Transceiver Interface
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Coaxial Transceiver Interface
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Coaxial Transceiver Interface
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Coaxial Transceiver Interface
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Coaxial Transceiver Interface
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SINGLE TMOS POWER MOSFET 30 VOLTS RDS(on) = 10 mohm
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英文版
SINGLE TMOS POWER MOSFET 30 VOLTS RDS(on) = 10 mohm
MOTOROLA [...
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Coaxial Transceiver Interface
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Coaxial Transceiver Interface
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Coaxial Transceiver Interface
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Coaxial Transceiver Interface
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Coaxial Transceiver Interface
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Coaxial Transceiver Interface
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Coaxial Transceiver Interface
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Coaxial Transceiver Interface
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Coaxial Transceiver Interface
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