音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

MTD20N06HD Datasheet

  • MTD20N06HD

  • TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

  • 12頁

  • MOTOROLA   MOTOROLA

掃碼查看芯片數(shù)據(jù)手冊

上傳產(chǎn)品規(guī)格書

PDF預覽

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTD20N06HD/D
鈩?/div>
Data Sheet
HDTMOS E-FET.
鈩?/div>
Power Field Effect Transistor
DPAK for Surface Mount
Designer's
MTD20N06HD
Motorola Preferred Device
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced HDTMOS power FET is designed to withstand
high energy in the avalanche and commutation modes. This new
energy efficient design also offers a drain鈥搕o鈥搒ource diode with a
fast recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
鈥?/div>
Surface Mount Package Available in 16 mm, 13鈥搃nch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage 鈥?Continuous
Gate鈥揝ource Voltage
鈥?Non鈥揜epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous
Drain Current
鈥?Continuous @ 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25擄C
Total Power Dissipation @ TA = 25擄C, when mounted to minimum recommended pad size
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 20 Apk, L = 0.3 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient
Thermal Resistance
鈥?Junction to Ambient, when mounted with the minimum recommended pad size
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
TMOS POWER FET
20 AMPERES
60 VOLTS
RDS(on) = 0.045 OHM
鈩?/div>
D
G
S
CASE 369A鈥?3, Style 2
DPAK
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
Value
60
60
鹵
20
鹵
30
20
16
60
40
0.32
1.75
鈥?55 to 150
60
3.13
100
71.4
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/擄C
Watts
擄C
mJ
擄C/W
TJ, Tstg
EAS
R
胃JC
R
胃JA
R
胃JA
TL
擄C
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
E鈥揊ET, Designer鈥檚 and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1995
1

MTD20N06HD相關(guān)型號PDF文件下載

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務：
賣家服務：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時間周一至周五
9:00-17:30

關(guān)注官方微信號，
第一時間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務的動力！意見一經(jīng)采納，將有感恩紅包奉上哦！