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MTD20N06HDL Datasheet

  • MTD20N06HDL

  • TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.0...

  • 295.40KB

  • 12頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
bt MTD20N06HDL/D
Advance Information
HDTMOS E-FET
鈩?/div>
High Density Power FET
DPAK for Surface Mount or
Insertion Mount
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced high鈥揷ell density HDTMOS E鈥揊ET is designed to
withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain鈥搕o鈥搒ource
diode with a fast recovery time. Designed for low鈥搗oltage,
high鈥搒peed switching applications in power supplies, converters
and PWM motor controls, these devices are particularly well suited
for bridge circuits, and inductive loads. The avalanche energy
capability is specified to eliminate the guesswork in designs where
inductive loads are switched, and to offer additional safety margin
against unexpected voltage transients.
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
鈥?/div>
Surface Mount Package Available in 16 mm, 13鈥搃nch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number
鈥?/div>
Available in Insertion Mount, Add 鈥? or 1 to Part Number
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage 鈥?Continuous
Gate鈥揝ource Voltage
鈥?Non鈥揜epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous @ 25擄C
Drain Current
鈥?Continuous @ 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25擄C
Total Power Dissipation @ TC = 25擄C (1)
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 20 Apk, L = 1.0 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient
Thermal Resistance
鈥?Junction to Ambient (1)
Maximum Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
(1) When surface mounted to an FR鈥? board using the minimum recommended pad size.
G
S
MTD20N06HDL
Motorola Preferred Device
TMOS POWER FET
LOGIC LEVEL
20 AMPERES
60 VOLTS
RDS(on) = 0.045 OHM
鈩?/div>
D
CASE 369A鈥?3, Style 2
DPAK
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
Value
60
60
鹵
15
鹵
20
20
12
60
40
0.32
1.75
鈥?55 to 150
200
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/擄C
Watts
擄C
mJ
TJ, Tstg
EAS
R
胃JC
R
胃JA
R
胃JA
TL
3.13
100
71.4
260
擄C/W
擄C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E鈥揊ET and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
1

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