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MTD1P50E Datasheet

  • MTD1P50E

  • TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM

  • 4頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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TMOS E-FET.
鈩?/div>
High Energy Power FET
P鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced high voltage TMOS E鈥揊ET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain鈥搕o鈥搒ource diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
鈥?/div>
Avalanche Energy Capability Specified at Elevated
Temperature
鈥?/div>
Low Stored Gate Charge for Efficient Switching
鈥?/div>
Internal Source鈥搕o鈥揇rain Diode Designed to Replace External
Zener Transient Suppressor鈥揂bsorbs High Energy in the
Avalanche Mode
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to Discrete
Fast Recovery Diode
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Gate鈥搕o鈥揝ource Voltage
鈥?Single Pulse (tp
鈮?/div>
50
碌s)
Drain Current 鈥?Continuous @ TC = 25擄C
Drain Current
鈥?Continuous @ TC = 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation @ TC = 25擄C
Derate above 25擄C
Total Power Dissipation @ TC = 25擄C, when mounted to minimum recommended pad size
Operating and Storage Temperature Range
D
MTD1P50E
Motorola Preferred Device
TMOS POWER FET
1.0 AMPERES
500 VOLTS
15
鈩?/div>
G
S
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
CASE 369A鈥?3, Style 2
DPAK Surface Mount
Value
500
500
20
40
1.0
0.8
4.0
50
0.4
1.75
鈥?55 to 150
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/擄C
Watts
擄C
TJ, Tstg
UNCLAMPED DRAIN鈥揟O鈥揝OURCE AVALANCHE CHARACTERISTICS
(TJ < 150擄C)
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 3.0 Apk, L = 10 mH, RG = 25
鈩?
EAS
45
mJ
THERMAL CHARACTERISTICS
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient
Thermal Resistance
鈥?Junction to Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 5 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
R
胃JC
R
胃JA
R
胃JA
TL
2.5
100
71.4
260
擄C/W
擄C
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
E鈥揊ET and Designer鈥檚 are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola TMOS
Motorola, Inc. 1996
Power MOSFET Transistor Device Data
1

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