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MTD1302 Datasheet

  • MTD1302

  • TMOS POWER FET 20 AMPERES 30 VOLTS

  • 12頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTD1302/D
Advance Information
HDTMOS E-FET
鈩?/div>
High Density Power FET
DPAK for Surface Mount
N鈥揅hannel Enhancement Mode Silicon Gate
This advanced HDTMOS power FET is designed to withstand
high energy in the avalanche and commutation modes. This new
energy efficient design also offers a drain鈥搕o鈥搒ource diode with a
fast recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters, and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
鈥?/div>
Diode Is Characterized for Use In Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
鈥?/div>
Surface Mount Package Available in 16 mm, 13鈥?/ 2500 Unit
Tape & Reel, Add 鈥淭4鈥?Suffix to Part Number
MTD1302
TMOS POWER FET
20 AMPERES
30 VOLTS
RDS(on) = 0.022 OHM
鈩?/div>
CASE 369A鈥?3, Style 2
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
鈥?Non鈥揜epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous
Drain Current
鈥?Continuous @ 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25擄C
Total Power Dissipation @ TC = 25擄C (1)
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 20 Apk, L = 1.0 mH, RG = 25
鈩?
Thermal Resistance
Junction to Case
Junction鈥搕o鈥揂mbient
Junction鈥搕o鈥揂mbient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from Case for 5.0 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
Value
30
30
鹵
20
鹵
20
20
16
60
74
0.592
1.75
鈥?55 to 150
200
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/擄C
Watts
擄C
mJ
擄C/W
TJ, Tstg
EAS
R
胃JC
R
胃JA
R
胃JA
TL
1.67
100
71.4
260
擄C
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
漏
Motorola, Inc. 1997
Motorola TMOS Power MOSFET Transistor Device Data
1

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