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MTB6N60E1 Datasheet

  • MTB6N60E1

  • TMOS POWER FET 6.0 AMPERES 600 VOLTS

  • 164.18KB

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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TMOS E-FET.
鈩?/div>
High Energy Power FET
D2PAK-SL Straight Lead
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced TMOS E鈥揊ET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain鈥搕o鈥搒ource diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
鈥?/div>
Robust High Voltage Termination
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
鈥?/div>
Short Heatsink Tab Manufactured 鈥?Not Sheared
鈥?/div>
Specially Designed Leadframe for Maximum Power Dissipation
D
MTB6N60E1
Motorola Preferred Device
TMOS POWER FET
6.0 AMPERES
600 VOLTS
RDS(on) = 1.2 OHM
廬
G
CASE 418C鈥?1, Style 2
D2PAK鈥揝L
S
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage 鈥?Continuous
Gate鈥揝ource Voltage
鈥?Non鈥揜epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous
Drain Current
鈥?Continuous @ 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation @ 25擄C
Derate above 25擄C
Total Power Dissipation @ TA = 25擄C (1)
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 10 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient
Thermal Resistance
鈥?Junction to Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
Value
600
600
鹵
20
鹵
40
6.0
4.6
18
125
1.0
2.5
鈥?55 to 150
405
R
胃JC
R
胃JA
R
胃JA
TL
1.0
62.5
50
260
擄C/W
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/擄C
Watts
擄C
mJ
TJ, Tstg
EAS
擄C
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
E鈥揊ET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1997
1

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