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MTB55N06Z Datasheet

  • MTB55N06Z

  • TMOS POWER FET 55 AMPERES 60 VOLTS

  • 6頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTB55N06Z/D
Advance Information
TMOS E-FET.
鈩?/div>
High Energy Power FET
D2PAK for Surface Mount
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced high voltage TMOS E鈥揊ET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain鈥搕o鈥搒ource diode
with fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, PWM motor controls and
other inductive loads, the avalanche energy capability is specified
to eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients.
鈥?/div>
Avalanche Energy Capability Specified at Elevated
Temperature
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
鈥?/div>
Low Stored Gate Charge for Efficient Switching
鈥?/div>
Internal Source鈥搕o鈥揇rain Diode Designed to Replace External
Zener Transient Suppressor鈥揂bsorbs High Energy in the
Avalanche Mode
鈥?/div>
ESD Protected. Designed to Typically Withstand 400 V
Machine Model and 4000 V Human Body Model.
D
MTB55N06Z
TMOS POWER FET
55 AMPERES
60 VOLTS
RDS(on) = 18 m鈩?/div>
鈩?/div>
G
CASE 418B鈥?2, Style 2
D2PAK
S
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Gate鈥搕o鈥揝ource Voltage
鈥?Non鈥揜epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous @ TC = 25擄C
Drain Current
鈥?Continuous @ TC = 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation @ TC = 25擄C
Derate above 25擄C
Total Power Dissipation @ TA = 25擄C (1)
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 25 Vdc, VDS = 60 Vdc, VGS = 10 Vdc, Peak IL = 55 Apk, L = 0.3 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient
Thermal Resistance
鈥?Junction to Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
Value
60
60
鹵
20
鹵
40
55
35.5
165
113
0.91
2.5
鈥?55 to 150
454
1.1
62.5
50
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/擄C
擄C
mJ
擄C/W
TJ, Tstg
EAS
R
胃JC
R
胃JC
R
胃JA
TL
擄C
E鈥揊ET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
REV 1
漏
Motorola TMOS
Motorola, Inc. 1997
Power MOSFET Transistor Device Data
1

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