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MTB50N06EL Datasheet

  • MTB50N06EL

  • TMOS POWER FET LOGIC LEVEL 50 AMPERES 60 VOLTS

  • 101.08KB

  • 4頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTB50N06EL/D
Advance Information
TMOS E-FET.
鈩?/div>
Power Field Effect Transistors
D2PAK for Surface Mount
Logic Level TMOS (L2TMOS
鈩?/div>
)
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
These TMOS Power FETs are designed for high speed, low loss
power switching applications such as switching regulators, convert-
ers, solenoid and relay drivers. This Logic Level Series part is
specified to operate with level logic gate鈥搕o鈥搒ource voltage of 5 volt
and 4 volt.
鈥?/div>
Silicon Gate for Fast Switching Speeds
鈥?/div>
Low RDS(on) 鈥?0.028
鈩?/div>
max
鈥?/div>
Replace External Zener Transient Suppressor 鈥?Absorbs High
Energy in the Avalanche Mode
鈥?/div>
Specially Designed Leadframe for Maximum Power Dissipation
鈥?/div>
Available in 24 mm 13鈥搃nch/800 Unit Tape & Reel, Add T4
Suffix to Part Number
MTB50N06EL
Motorola Preferred Device
TMOS POWER FET
LOGIC LEVEL
50 AMPERES
60 VOLTS
RDS(on) = 0.028 OHM
廬
D
G
S
CASE 418B鈥?2, Style 2
D2PAK
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage 鈥?Continuous
Drain Current 鈥?Continuous
Drain Current
鈥?Continuous @ 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
Value
60
60
鹵15
50
28
142
125
1.0
2.5
鈥?55 to 150
400
1.0
62.5
50
260
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/擄C
Watts
擄C
mJ
擄C/W
Total Power Dissipation
Derate above 25擄C
Total Power Dissipation @ TA = 25擄C, when mounted with the minimum recommended pad size
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 25 Vdc, VGS = 5.0 Vpk, IL = 50 Apk, L = 0.32 mH, RG = 25
鈩?/div>
)
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient
Thermal Resistance
鈥?Junction to Ambient, when mounted with the minimum recommended pad size
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
TJ, Tstg
EAS
R
胃JC
R
胃JA
R
胃JA
TL
擄C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E鈥揊ET, Designer鈥檚 and L2TMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1994
1

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