音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

MTB4N80E1 Datasheet

  • MTB4N80E1

  • TMOS POWER FET 4.0 AMPERES 800 VOLTS

  • 163.94KB

  • 8頁(yè)

  • MOTOROLA   MOTOROLA

掃碼查看芯片數(shù)據(jù)手冊(cè)

上傳產(chǎn)品規(guī)格書(shū)

PDF預(yù)覽

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTB4N80E1/D
Product Preview
TMOS E-FET.
鈩?/div>
High Energy Power FET
D2PAK-SL Straight Lead
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage鈥揵locking capability without
degrading performance over time. In addition, this advanced TMOS
E鈥揊ET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain鈥搕o鈥搒ource diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
鈥?/div>
Robust High Voltage Termination
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
鈥?/div>
Short Heatsink Tab Manufactured 鈥?Not Sheared
鈥?/div>
Specially Designed Leadframe for Maximum Power Dissipation
MTB4N80E1
Motorola Preferred Device
TMOS POWER FET
4.0 AMPERES
800 VOLTS
RDS(on) = 3.0 OHM
廬
D
G
CASE 418C鈥?1, Style 2
D2PAK鈥揝L
S
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage 鈥?Continuous
Gate鈥揝ource Voltage
鈥?Non鈥揜epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous
Drain Current
鈥?Continuous @ 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25擄C
Total Power Dissipation @ TA = 25擄C, when mounted with the minimum recommended pad size
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 100 Vdc, VGS = 10 Vdc, IL = 8.0 Apk, L = 10 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient
Thermal Resistance
鈥?Junction to Ambient, when mounted with the minimum recommended pad size
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
Value
800
800
鹵
20
鹵
40
4.0
2.9
12
125
1.0
2.5
鈥?55 to 150
320
1.0
62.5
50
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/擄C
Watts
擄C
mJ
擄C/W
TJ, Tstg
EAS
R
胃JC
R
胃JA
R
胃JA
TL
擄C
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
E鈥揊ET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1997
1

MTB4N80E1相關(guān)型號(hào)PDF文件下載

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買(mǎi)家服務(wù)：
賣(mài)家服務(wù)：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時(shí)間周一至周五
9:00-17:30

關(guān)注官方微信號(hào)，
第一時(shí)間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫(kù)提出的寶貴意見(jiàn)，您的參與是維庫(kù)提升服務(wù)的動(dòng)力！意見(jiàn)一經(jīng)采納，將有感恩紅包奉上哦！