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MTB40N10E Datasheet

  • MTB40N10E

  • TMOS POWER FET 40 AMPERES 100 VOLTS

  • 196.33KB

  • 10頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTB40N10E/D
Advance Data Sheet
TMOS E-FET.
鈩?/div>
Power Field Effect Transistor
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced TMOS E鈥揊ET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain鈥搕o鈥搒ource diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
MTB40N10E
TMOS POWER FET
40 AMPERES
100 VOLTS
RDS(on) = 0.04 OHM
廬
N鈥揅hannel
D
CASE 418B鈥?3, Style 2
D2PAK
G
S
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Gate鈥搕o鈥揝ource Voltage
鈥?Non鈥揜epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous
Drain Current
鈥?Continuous @ 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25擄C
Total Power Dissipation @ TA = 25擄C (1)
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 75 Vdc, VGS = 10 Vdc, PEAK IL = 40 Apk, L = 1.0 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient
Thermal Resistance
鈥?Junction to Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
Value
100
100
鹵
20
鹵
40
40
29
140
169
1.35
2.5
鈥?55 to 150
800
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/擄C
Watts
擄C
mJ
TJ, Tstg
EAS
R
胃JC
R
胃JA
R
胃JA
TL
0.74
62.5
50
260
擄C/W
擄C
E鈥揊ET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
REV 1
漏
Motorola TMOS
Motorola, Inc. 1997
Power MOSFET Transistor Device Data
1

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