鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to Discrete
Fast Recovery Diode
D
MTB3N60E
Motorola Preferred Device
TMOS POWER FET
3.0 AMPERES
600 VOLTS
RDS(on) = 2.2 OHMS
廬
G
S
CASE 418B鈥?3, Style 2
D2PAK
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage 鈥?Continuous
Gate鈥揝ource Voltage
鈥?Non鈥搑epetitive
Drain Current 鈥?Continuous
Drain Current
鈥?Continuous @ 100擄C
Drain Current
鈥?Pulsed
Total Power Dissipation @ TC = 25擄C
Derate above 25擄C
Total Power Dissipation @ TA = 25擄C(1)
Operating and Storage Temperature Range
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
Value
600
600
鹵
20
鹵
40
3.0
2.4
14
75
0.6
2.5
鈥?55 to 150
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Watts
W/擄C
Watts
擄C
TJ, Tstg
UNCLAMPED DRAIN鈥揟O鈥揝OURCE AVALANCHE CHARACTERISTICS
(TJ < 150擄C)
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?TJ = 25擄C
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy
鈥?TJ = 100擄C
Repetitive Pulse Drain鈥搕o鈥揝ource Avalanche Energy
WDSR(2)
WDSR(3)
290
46
7.5
mJ
THERMAL CHARACTERISTICS
Thermal Resistance 鈥?Junction to Case擄
Thermal Resistance
鈥?Junction to Ambient擄
Thermal Resistance
鈥?Junction to Ambient(1)
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
(1) When surface mounted to an FR鈥? board using the minimum recommended pad size
(2) VDD = 50 V, ID = 3.0 A
(3) Pulse Width and frequency is limited by TJ(max) and thermal response
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
R
胃JC
R
胃JA
R
胃JA
TL
1.67
62.5
50
260
擄C/W
擄C
E鈥揊ET and Designer鈥檚 are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
漏
Motorola TMOS
Motorola, Inc. 1997
Power MOSFET Transistor Device Data
1
MOTOROLA
1
2
3
4
