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MTB1306 Datasheet

  • MTB1306

  • TMOS POWER FET 75 AMPERES

  • 180.17KB

  • 8頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTB1306/D
Advance Information
HDTMOS E-FET.
鈩?/div>
High Density Power FET
D2PAK for Surface Mount
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
The D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower RDS(on) capabilities. This advanced
high鈥揷ell density HDTMOS power FET is designed to withstand
high energy in the avalanche and commutation modes. This new
energy efficient design also offers a drain鈥搕o鈥搒ource diode with fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable
to a Discrete Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
鈥?/div>
Short Heatsink Tab Manufactured 鈥?Not Sheared
鈥?/div>
Specially Designed Leadframe for Maximum Power Dissipation
鈥?/div>
Surface Mount Package Available in 16 mm, 13鈥搃nch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number
MTB1306
TMOS POWER FET
75 AMPERES
30 VOLTS
RDS(on) = 0.0065 OHM
CASE 418B鈥?3
D2PAK
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
鈥?Non鈥揜epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous
鈥?Continuous @ 100擄C
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25擄C
Total Power Dissipation @ TA = 25擄C (1)
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 75 Apk, L = 0.1 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction鈥搕o鈥揅ase
鈥?Junction鈥搕o鈥揂mbient
鈥?Junction鈥搕o鈥揂mbient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from Case for 5.0 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
Value
30
30
鹵
20
鹵
20
75
59
225
150
1.2
2.5
鈥?55 to 150
280
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/擄C
Watts
擄C
mJ
TJ, Tstg
EAS
R
胃JC
R
胃JA
R
胃JA
TL
0.8
62.5
50
260
擄C/W
擄C
E鈥揊ET and HDTMOS are trademarks of Motorola, Inc.
Motorola TMOS
漏
Motorola, Inc. 1997
Power MOSFET Transistor Device Data
1

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