鈥?/div>
SMD 5962-86859
SMD 5962-89692
MIL-STD-883
FEATURES
鈥?Speeds: 12, 15, 20, 25, 35, 45, 55, and 70ns
鈥?Battery Backup: 2V data retention
鈥?High-performance, low-power CMOS double-metal
process
鈥?Single +5V (+10%) Power Supply
鈥?Easy memory expansion with CE\
鈥?All inputs and outputs are TTL compatible
GENERAL DESCRIPTION
The Austin Semiconductor SRAM family employs
high-speed, low-power CMOS designs using a four-transistor
memory cell. Austin Semiconductor SRAMs are fabricated
using double-layer metal, double-layer polysilicon
technology.
For flexibility in high-speed memory applications, Austin
Semiconductor offers chip enable (CE\) on all organizations.
This enhancement can place the outputs in High-Z for
additional flexibility in system design.
Writing to these devices is accomplished when write
enable (WE\) and CE\ inputs are both LOW. Reading is
accomplished when WE\ remains HIGH and CE\ goes LOW.
The device offers a reduced power standby mode when
disabled. This allows system designs to achieve low standby
power requirements.
All devices operate from a single +5V power supply and
all inputs and outputs are fully TTL compatible.
OPTIONS
鈥?Timing
12ns access
15ns access
20ns access
25ns access
35ns access
45ns access
55ns access
70ns access
鈥?Package(s)
Ceramic DIP (300 mil)
MARKING
-12
-15
-20
-25
-35
-45*
-55*
-70*
C
No. 105
鈥?Operating Temperature Ranges
Industrial (-40
o
C to +85
o
C)
IT
o
o
Military (-55 C to +125 C)
XT
鈥?2V data retention/low power
L
*Electrical characteristics identical to those provided for the 35ns
access devices.
For more products and information
please visit our web site at
www.austinsemiconductor.com
MT5C6404
Rev. 1.0 9/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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