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MT55L512L18P Datasheet

  • MT55L512L18P

  • 8Mb ZBT SRAM

  • 25頁

  • MICRON

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8Mb: 512K x 18, 256K x 32/36
PIPELINED ZBT SRAM
8Mb
ZBT
廬
SRAM
FEATURES
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High frequency and 100 percent bus utilization
Fast cycle times: 6ns, 7.5ns and 10ns
Single +3.3V 鹵5% power supply (V
DD
)
Separate +3.3V or +2.5V isolated output buffer
supply (V
DD
Q)
Advanced control logic for minimum control
signal interface
Individual BYTE WRITE controls may be tied LOW
Single R/W# (read/write) control pin
CKE# pin to enable clock and suspend operations
Three chip enables for simple depth expansion
Clock-controlled and registered addresses, data
I/Os and control signals
Internally self-timed, fully coherent WRITE
Internally self-timed, registered outputs to
eliminate the need to control OE#
SNOOZE MODE for reduced-power standby
Common data inputs and data outputs
Linear or Interleaved Burst Modes
Burst feature (optional)
Pin/function compatibility with 2Mb, 4Mb, and
18Mb ZBT SRAM
Automatic power-down
100-pin TQFP package
165-pin FBGA package
MT55L512L18P, MT55L512V18P,
MT55L256L32P, MT55L256V32P,
MT55L256L36P, MT55L256V36P
3.3V V
DD
, 3.3V or 2.5V I/O
100-Pin TQFP
1
165-Pin FBGA
NOTE:
1. JEDEC-standard MS-026 BHA (LQFP).
OPTIONS
鈥?Timing (Access/Cycle/MHz)
3.5ns/6ns/166 MHz
4.2ns/7.5ns/133 MHz
5ns/10ns/100 MHz
鈥?Configurations
3.3V I/O
512K x 18
256K x 32
256K x 36
2.5V I/O
512K x 18
256K x 32
256K x 36
鈥?Package
100-pin TQFP
165-pin, 13mm x 15mm FBGA
鈥?Operating Temperature Range
Commercial (0潞C to +70潞C)
Industrial (-40擄C to +85擄C)**
Part Number Example:
MARKING
-6
-7.5
-10
* A Part Marking Guide for the FBGA devices can be found on Micron鈥檚
Web site鈥攈ttp://www.micron.com/support/index.html.
** Industrial temperature range offered in specific speed grades and
configurations. Contact factory for more information.
MT55L512L18P
MT55L256L32P
MT55L256L36P
MT55L512V18P
MT55L256V32P
MT55L256V36P
T
F*
None
IT
GENERAL DESCRIPTION
The Micron
廬
Zero Bus Turnaround
鈩?/div>
(ZBT
廬
) SRAM
family employs high-speed, low-power CMOS designs
using an advanced CMOS process.
Micron鈥檚 8Mb ZBT SRAMs integrate a 512K x 18,
256K x 32, or 256K x 36 SRAM core with advanced
synchronous peripheral circuitry and a 2-bit burst
counter. These SRAMs are optimized for 100 percent
bus utilization, eliminating any turnaround cycles for
READ to WRITE, or WRITE to READ, transitions. All
synchronous inputs pass through registers controlled
by a positive-edge-triggered single clock input (CLK).
The synchronous inputs include all addresses, all data
inputs, chip enable (CE#), two additional chip enables
for easy depth expansion (CE2, CE2#), cycle start input
MT55L256L32PT-7.5
8Mb: 512K x 18, 256K x 32/36 Pipelined ZBT SRAM
MT55L512L18P_C.p65 鈥?Rev. 2/02
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
漏2002, Micron Technology, Inc.

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