TOSHIBA
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
MT4S34U
MT4S34U
VHF-UHF BAND LOW NOISE AMPLIFIER APLICATIONS.
- Low Noise : Figure : NF=1.2dB(at f=2GHz)
- High Gain : |S21e|
2
=14dB(at f=2GHz)
2.0鹵0.2
1.3鹵0.1
1
2
Tentative
2.1鹵0.1
1.25鹵0.1
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
RATING
6
3
1.5
36
12
100
125
-55-125
UNIT
V
4
3
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
mA
0鈭?.1
mA
mW
deg
deg.
1.BASE
2.EMITTER
3.COLLECTOR
4.EMITTER
JEDEC
EIAJ
TOSHIBA
-
-
MARKING
2
1
3
4
MICROWAVE CHARACTERISTICS(Ta=25deg.)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
15
12
-
TYP.
19
14
1.2
MAX.
-
17
TBD
UNIT
GHz
dB
dB
Transition Frequency
Insertion Gain
Noise Figure
f
T
錕?frac12;錕絊
21e
錕?frac12;錕?/div>
2
NF
V
CE
=2V錛孖
C
=20mA
V
CE
=2V錛孖
C
=20mA錛宖=2GHz
V
CE
=2V錛孖
C
=5mA錛宖=2GHz
ELECTRICAL CHARACTERISTICS(Ta=25deg.)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Output Capacitance
Reverse Transistor Capacitance
SYMBOL
TEST CONDITION
MIN.
-
-
TBD
-
-
TYP.
-
-
TBD
0.4
0.2
MAX.
1
1
TBD
-
-
UNIT
uA
uA
-
pF
pF
I
CBO
I
EBO
h
FE
Cob
Cre
V
CB
=6V錛孖
E
=0
V
EB
=1V錛孖
C
=0
V
CE
=2V錛孖
C
=20mA
V
CB
=2V錛孖
E
=0錛宖=1MHz (Note)
NOTE : C
re
is measured by 3 terminal method with capacitance bridge
CAUTION
This device is sensitive to electrostatic discharge. Please make each tool and equipment earthed when you handle.
0.7
V
-0 15
+0.05
0.95
V
0.15鹵0.05
0.2
+0.1
-0 05
MAXIMUM RATINGS (Ta=25deg.)
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