MT4S101T
TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE
TENTATIVE
MT4S101T
Unit: mm
UHF LOW NOISE AMPLIFIER APPLICATION
FEATURES
路
路
Low Noise Figure :NF=0.8dB (@f=2GHz)
High Gain:|S21e| =17.0dB (@f=2GHz)
2
1.2鹵0.05
0.9鹵0.05
1.2鹵0.05
0.8鹵0.05
2
1
Type name
2
3
3
4
Maximum Ratings
(Ta = 25擄C)
Characteristics
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Current
Base-Current
Collector Power dissipation
Junction temperature
Storage temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
6
3
1.2
10
5
30
150
鈭?5~150
Unit
V
V
V
mA
mA
mW
擄C
擄C
TESQ
JEDEC
JEITA
TOSHIBA
Weight: 0.0015 g
-
-
-
1
0.52鹵0.05
1. BASE
2. EMITTER
3. COLLECTOR
4. EMITTER
02-06-04
0.12鹵0.05
P 7
0.2鹵0.05
Marking
1
4