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MT4S100T

TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE

TENTATIVE

MT4S100T

Unit: mm

UHF LOW NOISE AMPLIFIER APPLICATION

FEATURES

路

路

Low Noise Figure :NF=0.72dB (@f=2GHz)

High Gain:|S21e| =17.0dB (@f=2GHz)

2

1.2鹵0.05

0.9鹵0.05

1.2鹵0.05

0.8鹵0.05

2

1

Type name

2

3

3

4

Maximum Ratings

(Ta = 25擄C)

Characteristics

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector-Current

Base-Current

Collector Power dissipation

Junction temperature

Storage temperature Range

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

B

P

C

T

j

T

stg

Rating

6

3

1.2

15

7

45

150

鈭?5~150

Unit

V

V

V

mA

mA

mW

擄C

擄C

TESQ

JEDEC

JEITA

TOSHIBA

Weight: 0.0015 g

-

-

-

1

0.52鹵0.05

1. BASE

2. EMITTER

3. COLLECTOR

4. EMITTER

02-05-28

0.12鹵0.05

P 6

0.2鹵0.05

Marking

1

4

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