MT3S05T
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S05T
VHF~UHF Band Low Noise Amplifier Applications
路
路
路
Sutable for use in an OSC
Low noise figure
NF = 1.4dB
Excellent collector current linearity
|S21e|
2
= 8.5dB (@1 V/5 mA/1 GHz)
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
Tstg
Rating
10
5
2
40
10
100
125
-55~125
Unit
V
V
V
mA
mA
mW
擄C
擄C
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-1B1A
g (typ.)
Marking
3
Weight:
T
1
K
2
1
2002-01-23
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