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MT28F800B3 Datasheet

  • MT28F800B3

  • FLASH MEMORY

  • 30頁

  • MICRON

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8Mb
SMART 3 BOOT BLOCK FLASH MEMORY
FLASH MEMORY
MT28F008B3
MT28F800B3
3V Only, Dual Supply (Smart 3)
FEATURES
鈥?Eleven erase blocks:
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Eight main memory blocks
鈥?Smart 3 technology (B3):
3.3V 鹵0.3V V
CC
3.3V 鹵0.3V V
PP
application programming
5V 鹵10% V
PP
application/production programming
1
鈥?Compatible with 0.3碌m Smart 3 device
鈥?Advanced 0.18碌m CMOS floating-gate process
鈥?Address access time: 90ns
鈥?100,000 ERASE cycles
鈥?Industry-standard pinouts
鈥?Inputs and outputs are fully TTL-compatible
鈥?Automated write and erase algorithm
鈥?Two-cycle WRITE/ERASE sequence
鈥?TSOP, SOP and FBGA packaging options
鈥?Byte- or word-wide READ and WRITE
(MT28F800B3):
1 Meg x 8/512K x 16
40-Pin TSOP Type I 48-Pin TSOP Type I
44-Pin SOP
OPTIONS
鈥?Timing
90ns access
鈥?Configurations
1 Meg x 8
512K x 16/1 Meg x 8
鈥?Boot Block Starting Word Address
Top (7FFFFh)
Bottom (00000h)
鈥?Operating Temperature Range
Commercial (0潞C to +70潞C)
Extended (-40潞C to +85潞C)
鈥?Packages
40-pin TSOP Type I (MT28F008B3)
48-pin TSOP Type I (MT28F800B3)
44-pin SOP (MT28F800B3)
NOTE:
MARKING
-9
GENERAL DESCRIPTION
MT28F008B3
MT28F800B3
T
B
None
ET
VG
WG
SG
The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are
low-voltage, nonvolatile, electrically block-erasable (flash),
programmable memory devices containing 8,388,608 bits
organized as 524,288 words (16 bits) or 1,048,576 bytes (8
bits). Writing and erasing the device is done with a V
PP
voltage of either 3.3V or 5V, while all operations are
performed with a 3.3V V
CC
. Due to process technology
advances, 5V V
PP
is optimal for application and production
programming. These devices are fabricated with Micron鈥檚
advanced 0.18碌m CMOS floating-gate process.
The MT28F008B3 and MT28F800B3 are organized
into eleven separately erasable blocks. To ensure that
critical firmware is protected from accidental erasure or
overwrite, the devices feature a hardware-protected
boot block. This block may be used to store code imple-
mented in low-level system recovery. The remaining
blocks vary in density and are written and erased with
no additional security measures.
Refer to Micron鈥檚 Web site (www.micron.com/flash)
for the latest data sheet.
1. This generation of devices does not support 12V V
PP
production programming; however, 5V V
PP
application
production programming can be used with no loss of
performance.
Part Number Example:
MT28F800B3WG-9 BET
8Mb Smart 3 Boot Block Flash Memory
Q10_3.p65 鈥?Rev. 3, Pub. 10/01
1
漏2001, Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

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