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MT28F322P3 Datasheet

  • MT28F322P3

  • FLASH MEMORY

  • 390.38KB

  • 36頁(yè)

  • MICRON

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PRELIMINARY
鈥?/div>
2 MEG x 16
ASYNC/PAGE FLASH MEMORY
FLASH MEMORY
MT28F322P3
Low Voltage, Extended Temperature
FEATURES
鈥?Flexible dual-bank architecture
Support for true concurrent operation with zero
latency
Read bank
a
during program bank
b
and vice
versa
Read bank
a
during erase bank
b
and vice versa
鈥?Basic configuration:
Seventy-one erasable blocks
Bank
a
(8Mb for data storage)
Bank
b
(24Mb for program storage)
鈥?V
CC
, V
CC
Q, V
PP
voltages
2.7V (MIN), 3.3V (MAX) V
CC
2.2V (MIN), 3.3V (MAX) V
CC
Q
3.0V (TYP) V
PP
(in-system PROGRAM/ERASE)
12V 鹵5% (HV) V
PP
tolerant (factory programming
compatibility)
鈥?Random access time: 70ns @ 2.7V V
CC
鈥?Page Mode read access
Eight-word page
Interpage read access: 70ns @ 2.7V
Intrapage read access: 30ns @ 2.7V
鈥?Low power consumption (V
CC
= 3.3V)
Asynchronous/interpage READ < 15mA
Intrapage READ < 7mA
WRITE < 20mA (MAX)
ERASE < 25mA (MAX)
Standby < 15碌A(chǔ) (TYP), 50碌A(chǔ) (MAX) @ 3.3V
Automatic power save (APS) feature
鈥?Enhanced write and erase suspend options
ERASE-SUSPEND-to-READ within same bank
PROGRAM-SUSPEND-to-READ within same bank
ERASE-SUSPEND-to-PROGRAM within same bank
鈥?Dual 64-bit chip protection registers for security
purposes
鈥?Cross-compatible command support
Extended command set
Common flash interface
鈥?PROGRAM/ERASE cycle
100,000 WRITE/ERASE cycles per block
鈥?Fast programming algorithm
V
PP
= 12V 鹵5%
BALL ASSIGNMENT
48-Ball FBGA
1
A
B
C
D
E
F
A13
2
A11
3
A8
4
V
PP
5
WP#
6
A19
7
A7
8
A4
A14
A10
WE#
RST#
A18
A17
A5
A2
A15
A12
A9
NC
A20
A6
A3
A1
A16
DQ14
DQ5
DQ11
DQ2
DQ8
CE#
A0
V
CC
Q
DQ15
DQ6
DQ12
DQ3
DQ9
DQ0
V
SS
V
SS
DQ7
DQ13
DQ4
V
CC
DQ10
DQ1
OE#
Top View
(Ball Down)
NOTE:
See page 7 for Ball Description Table.
See page 35 for mechanical drawing.
OPTIONS
鈥?Timing
70ns access
80ns access
鈥?Boot Block Configuration
Top
Bottom
鈥?Package
48-ball FBGA (6 x 8 ball grid)
鈥?Operating Temperature Range
Commercial (0潞C to +70潞C)
Extended (-40潞C to +85潞C)
Part Number Example:
MARKING
-70
-80
T
B
FJ
None
ET
MT28F322P3FJ-70 BET
2 Meg x 16 Async/Page Flash Memory
MT28F322P3FJ_3.p65 鈥?Rev. 3, Pub. 7/02
1
漏2002, Micron Technology, Inc.
鈥?/div>
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR
EVALUATION AND REFERENCE PURPOSES ONLY AND ARE
SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON鈥橲
PRODUCTION DATA SHEET SPECIFICATIONS.

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