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MT28F200B3 Datasheet

  • MT28F200B3

  • FLASH MEMORY

  • 31頁

  • MICRON

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2Mb
SMART 3 BOOT BLOCK FLASH MEMORY
FLASH MEMORY
MT28F002B3
MT28F200B3
3V Only, Dual Supply (Smart 3)
40-Pin TSOP Type I 48-Pin TSOP Type I
FEATURES
鈥?Five erase blocks:
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Two main memory blocks
鈥?Smart 3 technology (B3):
3.3V
鹵0.3V
V
CC
3.3V
鹵0.3V
V
PP
application programming
5V
鹵10%
V
PP
application/production
programming
12V
鹵5%
V
PP
compatibility production
programming
鈥?Address access times: 90ns, 100ns
鈥?100,000 ERASE cycles
鈥?Industry-standard pinouts
鈥?Inputs and outputs are fully TTL-compatible
鈥?Automated write and erase algorithm
鈥?Two-cycle WRITE/ERASE sequence
鈥?Byte- or word-wide READ and WRITE
(MT28F200B3, 128K x 16/256K x 8)
鈥?Byte-wide READ and WRITE only
(MT28F002B3, 256K x 8)
鈥?TSOP and SOP packaging options
44-Pin SOP
GENERAL DESCRIPTION
The MT28F002B3 (x8) and MT28F200B3 (x16/x8)
are nonvolatile, electrically block-erasable (flash), pro-
grammable, read-only memories containing 2,097,152
bits organized as 131,072 words (16 bits) or 262,144
bytes (8 bits). Writing or erasing the device is done with
either a 3.3V or 5V V
PP
voltage, while all operations are
performed with a 3.3V V
CC
. Due to process technology
advances, 5V V
PP
is optimal for application and produc-
tion programming. For backward compatibility with
SmartVoltage technology, 12V V
PP
is supported for a
maximum of 100 cycles and may be connected for up
to 100 cumulative hours. These devices are fabricated
with Micron鈥檚 advanced CMOS floating-gate process.
The MT28F002B3 and MT28F200B3 are organized
into five separately erasable blocks. To ensure that
critical firmware is protected from accidental erasure or
overwrite, the devices feature a hardware-protected
boot block. Writing or erasing the boot block requires
either applying a super-voltage to the RP# pin or driv-
ing WP# HIGH in addition to executing the normal
write or erase sequences. This block may be used to store
code implemented in low-level system recovery. The
remaining blocks vary in density and are written and
erased with no additional security measures.
Please refer to
Micron鈥檚 Web site
(www.micron.com/
flash/htmls/datasheets.html)
for the latest data sheet.
OPTIONS
鈥?Timing
90ns access
100ns access
鈥?Configurations
256K x 8
128K x 16/256K x 8
鈥?Boot Block Starting Word Address
Top (1FFFFH)
Bottom (00000H)
鈥?Operating Temperature Range
Commercial (0擄C to +70擄C)
Extended (-40擄C to +85擄C)
鈥?Packages
Plastic 44-pin SOP (600 mil)
Plastic 48-pin TSOP Type 1
(12mm x 20mm)
Plastic 40-pin TSOP
(10mm x 20mm)
Part Number Example:
MARKING
-9
-10 ET
MT28F002B3
MT28F200B3
T
B
None
ET
SG
WG
VG
MT28F200B3SG-9 T
2Mb Smart 3 Boot Block Flash Memory
F48.p65 鈥?Rev. 1/00
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
漏2000, Micron Technology, Inc.

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