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MT28F160C3 Datasheet

  • MT28F160C3

  • FLASH MEMORY

  • 339.95KB

  • 28頁(yè)

  • MICRON

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ADVANCE
鈥?/div>
1 MEG x 16
3V ENHANCED+ BOOT BLOCK FLASH MEMORY
FLASH MEMORY
FEATURES
鈥?Thirty-nine erase blocks:
Eight 4K-word parameter blocks
Thirty-one 32K-word main memory blocks
鈥?V
CC
, V
CC
Q and V
PP
voltages:
2.7V鈥?.3V V
CC
2.7V鈥?.3V V
CC
Q*
1.65V鈥?.3V and 12V V
PP
鈥?Address access times:
90ns, 110ns at 2.7V鈥?.3V
鈥?Low power consumption:
Standby and deep power-down mode < 1碌A(chǔ)
(typical I
CC
)
Automatic power saving feature (APS mode)
鈥?Enhanced WRITE/ERASE SUSPEND (1碌s typical)
鈥?128-bit OTP area for security purposes
鈥?Industry-standard command set compatibility
鈥?Software/hardware block protection
MT28F160C3
Low Voltage, Extended Temperature
BALL ASSIGNMENT (Top View)
46-Ball FBGA
1
A
B
C
D
E
F
A13
2
A11
3
A8
4
V
PP
5
WP#
6
A19
7
A7
8
A4
A14
A10
WE#
RP#
A18
A17
A5
A2
A15
A12
A9
A6
A3
A1
A16
DQ14
DQ5
DQ11
DQ2
DQ8
CE#
A0
V
CC
Q
DQ15
DQ6
DQ12
DQ3
DQ9
DQ0
V
SS
V
SS
DQ7
DQ13
DQ4
V
CC
DQ10
DQ1
OE#
OPTIONS
鈥?Timing
90ns access
110ns access
鈥?Boot Block Starting Address
Top (FFFFFH)
Bottom (00000H)
鈥?Package
46-ball FBGA (6 x 8 ball grid)
鈥?Temperature Range
Commercial (0擄C to +70擄C)
Extended (-40擄C to +85擄C)
*Lower V
CC
Q ranges are available upon request.
Part Number Example:
NUMBER
-9
-11
T
B
FD
None
ET
(Ball Down)
NOTE:
See page 3 for Ball Description Table.
See last page for mechanical drawing.
MT28F160C3FD-11 TET
has an I/O supply of 2.7V (MIN). Programming in pro-
duction is accomplished by using high voltage which can
be supplied on a separate line.
The embedded WORD WRITE and BLOCK ERASE
functions are fully automated by an on-chip write state
machine (WSM), which simplifies these operations and
relieves the system processor of secondary tasks. The
WSM status can be monitored by an on-chip status reg-
ister to determine the progress of program/erase tasks.
The device is equipped with 128 bits of one time
programmable (OTP) area. The soft protection feature
for blocks will mark them as read-only by configuring soft
protection registers with command sequences.
Please refer to Micron鈥檚 Web site (www.micron.com/
flash)
for the latest data sheet.
GENERAL DESCRIPTION
The MT28F160C3 is a nonvolatile, electrically block-
erasable (flash), programmable, read-only memory con-
taining 16,777,216 bits organized as 1,048,576 words (16
bits).
The MT28F160C3 is manufactured on 0.22碌m pro-
cess technology in a 48-ball FBGA package. The device
1 Meg x 16 3V Enhanced+ Boot Block Flash Memory
MT28F160C3_3.p65 鈥?Rev. 3, Pub. 8/01
DEVICE MARKING
Due to the size of the package, Micron鈥檚 standard part
number is not printed on the top of each device. Instead,
an abbreviated device mark comprised of a five-digit
alphanumeric code is used. The abbreviated device marks
are cross referenced to Micron part numbers in Table 1.
1
漏2001, Micron Technology, Inc.
鈥?/div>
PRODUCTS
AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND
ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET
MICRON鈥橲 PRODUCTION DATA SHEET SPECIFICATIONS.

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