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MT28F004B5-1 Datasheet

  • MT28F004B5-1

  • FLASH MEMORY

  • 32頁(yè)

  • MICRON

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4Mb
SMART 5 BOOT BLOCK FLASH MEMORY
FLASH MEMORY
FEATURES
鈥?Seven erase blocks:
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Four main memory blocks
鈥?Smart 5 technology (B5):
5V 鹵10% V
CC
5V 鹵10% V
PP
application/production
programming
1
鈥?Advanced 0.18碌m CMOS floating-gate process
鈥?Compatible with 0.3碌m Smart 5 device
鈥?Address access time: 80ns
鈥?100,000 ERASE cycles
鈥?Industry-standard pinouts
鈥?Inputs and outputs are fully TTL-compatible
鈥?Automated write and erase algorithm
鈥?Two-cycle WRITE/ERASE sequence
鈥?Byte- or word-wide READ and WRITE
(MT28F400B5, 256K x 16/512K x 8)
鈥?Byte-wide READ and WRITE only
(MT28F004B5, 512K x 8)
鈥?TSOP and SOP packaging options
MT28F004B5
MT28F400B5
5V Only, Dual Supply (Smart 5)
0.18碌m Process Technology
40-Pin TSOP Type I
48-Pin TSOP Type I
44-Pin SOP
2
GENERAL DESCRIPTION
The MT28F004B5 (x8) and MT28F400B5 (x16, x8)
are nonvolatile, electrically block-erasable (Flash),
programmable, read-only memories containing
4,194,304 bits organized as 262,144 words (16 bits) or
524,288 bytes (8 bits). Writing or erasing the device is
done with a 5V V
PP
voltage, while all operations are
performed with a 5V V
CC
. Due to process technology
advances, 5V V
PP
is optimal for application and pro-
duction programming. These devices are fabricated
with Micron鈥檚 advanced 0.18碌m CMOS floating-gate
process.
The MT28F004B5 and MT28F400B5 are organized
into seven separately erasable blocks. To ensure that
critical firmware is protected from accidental erasure
or overwrite, the devices feature a hardware-protected
boot block. Writing or erasing the boot block requires
either applying a super-voltage to the RP# pin or driv-
ing WP# HIGH in addition to executing the normal
write or erase sequences. This block may be used to
store code implemented in low-level system recovery.
The remaining blocks vary in density and are written
and erased with no additional security measures.
Please refer to Micron鈥檚 Web site (www.micron.com/
flash)
for the latest data sheet.
OPTIONS
鈥?Timing
80ns access
鈥?Configurations
512K x 8
256K x 16/512K x 8
鈥?Boot Block Starting Word Address
Top (3FFFFh)
Bottom (00000h)
鈥?Operating Temperature Range
Commercial (0潞C to +70潞C)
Extended (-40潞C to +85潞C)
鈥?Packages
MT28F400B5
Plastic 44-pin SOP (600 mil)
Plastic 48-pin TSOP Type I
MT28F004B5
Plastic 40-pin TSOP Type I
Notes:
MARKING
-8
MT28F004B5
MT28F400B5
T
B
None
ET
SG
2
WG
VG
1.
This generation of devices does not support 12V V
PP
compatibility production programming; however, 5V
V
PP
application production programming can be used
with no loss of performance.
2.
Contact factory for availability.
Part Number Example:
MT28F400B5WG-8 T
4Mb Smart 5 Boot Block Flash Memory
MT28F004B5_3.fm - Rev. 3, Pub. 8/2002
1
漏2002, Micron Technology Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE
.

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