MSM56V16800F Datasheet

IC型號：
MSM56V16800F
PDF描述：
2-Bank x 1,048,576 Word x 8 Bit SYNCHRONOUS DYNAMIC RAM
文件大?。?/label>
2980.01KB
PDF頁數(shù)：
30頁
芯片廠家：
OKI

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Semiconductor

MSM56V16800F

2-Bank

麓

1,048,576 Word

麓

8 Bit SYNCHRONOUS DYNAMIC RAM

This version : Dec.1999

DESCRIPTION

The MSM56V16800F is a 2-Bank

麓

1,048,576-word

麓

8 bit Synchronous dynamic RAM, fabricated in OKI鈥檚

CMOS silicon-gate process technology. The device operates at 3.3V. The inputs and outputs are LVTTL

compatible.

FEATURES

路

Silicon gate , quadruple polysilicon CMOS , 1-transistor memory cell

2-bank

麓

1,048,576-word

麓

8bit configuration

3.3V power supply 鹵 0.3V tolerance

Input

Output

Refresh

: LVTTL compatible

: 4096 cycles/64 ms

Programmable data transfer mode

CAS Latency (1,2,3)

Burst Length (1,2,4,8,Full page)

Data scramble (sequential , interleave)

路

CBR auto-refresh, Self-refresh capability

Package:

44-pin 400mil plastic TSOP (Type II)

(TSOPII44-P-400-0.80-K)

(Product : MSM56V16800F-xxTS-K)

xx : indicates speed rank.

PRODUCT FAMILY

Family

MSM56V16800F-8A

MSM56V16800F-8

MSM56V16800F-10

Max.

Frequency

125MHz

100MHz

Access Time (Max.)

AC2

6ns

9ns

AC3

6ns

9ns

1/30

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