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E2G1053-18-54

隆 Semiconductor

MSM56V16800E

隆 Semiconductor

This version: Jul. 1998

MSM56V16800E

2-Bank

樓

1,048,576-Word

樓

8-Bit SYNCHRONOUS DYNAMIC RAM

DESCRIPTION

The MSM56V16800E is a 2-bank

樓

1,048,576-word

樓

8-bit synchronous dynamic RAM, fabricated

in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and

outputs are LVTTL compatible.

FEATURES

鈥?/div>

Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell

2-bank

樓

1,048,576-word

樓

8-bit configuration

3.3 V power supply,

鹵0.3

V tolerance

Input

: LVTTL compatible

Output : LVTTL compatible

Refresh : 4096 cycles/64 ms

Programmable data transfer mode

鈥?/div>

CAS

latency (1, 2, 3)

鈥?Burst length (1, 2, 4, 8, full page)

鈥?Data scramble (sequential, interleave)

鈥?CBR auto-refresh, Self-refresh capability

鈥?Package:

44-pin 400 mil plastic TSOP (Type II) (TSOPII44-P-400-0.80-K)

(Product : MSM56V16800E-xxTS-K)

xx indicates speed rank.

PRODUCT FAMILY

Family

MSM56V16800E-8

MSM56V16800E-10

Max.

Frequency

125 MHz

100 MHz

Access Time (Max.)

t

AC1

22 ns

27 ns

t

AC2

10 ns

9 ns

t

AC3

6 ns

9 ns

1/30

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MSM56V16800E Datasheet

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